AlNaO4Si

AlNaO4Si has a DFT band gap of 2.80–4.80 eV across 21 reported structures in 11 space groups; its reference structure is cubic (Pm-3m (No. 221)). Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for AlNaO4Si, aggregated across 2 databases.

Band Gap

2.80–4.80 eV
Range across DFT structures · ground state: insulator

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
1 DFT source

Structures

21
2 databases, 11 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of AlNaO4Si. Tight agreement means computed properties can be trusted without re-running calculations.

Only 1 independent DFT source (materials_project) reports a hull energy for AlNaO4Si, so cross-source agreement can't be assessed yet.

Crystallography

Reported Structures

Lowest-energy structures reported for AlNaO4Si, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pca21 (No. 29)orthorhombic4.600.0000-7.4772.58
P61 (No. 169)hexagonal4.540.0073-7.4692.56
P213 (No. 198)cubic4.480.0117-7.4652.41
P1 (No. 1)triclinic4.350.0142-7.4622.55
P63 (No. 173)hexagonal4.280.0145-7.4622.51
R3c (No. 161)trigonal3.820.0262-7.4501.77
Pmc21 (No. 26)orthorhombic4.800.1953-7.2813.80
P63 (No. 173)hexagonal2.800.8248-6.6522.36
P21 (No. 4)monoclinic0.004.2524-3.2242.38
Pca21 (No. 29)orthorhombic———1.27
Pnma (No. 62)orthorhombic———3.92
P213 (No. 198)cubic———2.36
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting AlNaO4Si.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about AlNaO4Si, answered from cross-validated data.

What is the band gap of AlNaO4Si?

AlNaO4Si has a DFT-computed band gap of 2.80–4.80 eV across 21 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is AlNaO4Si a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 4.80 eV (an insulator or wide-band-gap material).
Is AlNaO4Si thermodynamically stable?
Yes — AlNaO4Si sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of AlNaO4Si?
The reference structure of AlNaO4Si is cubic symmetry, space group Pm-3m (No. 221).
What is the density of AlNaO4Si?
The computed density of the ground-state structure of AlNaO4Si is 1.53 g/cm³.
How many polymorphs of AlNaO4Si are known?
21 structures of AlNaO4Si are reported across 2 databases, spanning 11 distinct space groups.
How is AlNaO4Si synthesized?
Literature-reported routes for AlNaO4Si include solid state (4 procedures documented).
What elements does AlNaO4Si contain?
AlNaO4Si contains Al, Na, O, and Si (4 elements).
Where does the data for AlNaO4Si come from?
AlNaO4Si data is cross-referenced from materials_project, cod.
Explore

Related Compounds

Other Aluminosilicates and Zeolite Frameworks in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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