Al8Mg4O36Si10

Al8Mg4O36Si10 has a DFT band gap of 4.82 eV across 12 reported structures in 1 space group; its reference structure is orthorhombic (Cccm (No. 66)). Cross-validated across 1 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Al8Mg4O36Si10, aggregated across 1 database.

Band Gap

4.82 eV
Range across DFT structures · ground state: insulator

Energy Above Hull

—
Best (lowest) across sources

Stability

Stable
2 DFT sources

Structures

12
1 database, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Al8Mg4O36Si10. Tight agreement means computed properties can be trusted without re-running calculations.

Only 1 independent DFT source (materials_project) reports a hull energy for Al8Mg4O36Si10, so cross-source agreement can't be assessed yet.

Crystallography

Reported Structures

Lowest-energy structures reported for Al8Mg4O36Si10, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cccm (No. 66)orthorhombic4.820.0000-7.9672.42
P1 (No. 1)triclinic4.350.0238-7.9432.42
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Cccm (No. 66)orthorhombic4.82—-7.5402.43
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Al8Mg4O36Si10.

Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about Al8Mg4O36Si10, answered from cross-validated data.

What is the band gap of Al8Mg4O36Si10?

Al8Mg4O36Si10 has a DFT-computed band gap of 4.82 eV across 12 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is Al8Mg4O36Si10 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 4.82 eV (an insulator or wide-band-gap material).
What is the crystal structure of Al8Mg4O36Si10?
The reference structure of Al8Mg4O36Si10 is orthorhombic symmetry, space group Cccm (No. 66).
What is the density of Al8Mg4O36Si10?
The computed density of the ground-state structure of Al8Mg4O36Si10 is 2.42 g/cm³.
How many polymorphs of Al8Mg4O36Si10 are known?
12 structures of Al8Mg4O36Si10 are reported across 1 database, spanning 1 distinct space group.
How is Al8Mg4O36Si10 synthesized?
Literature-reported routes for Al8Mg4O36Si10 include sol gel, solid state (8 procedures documented).
What elements does Al8Mg4O36Si10 contain?
Al8Mg4O36Si10 contains Al, Mg, O, and Si (4 elements).
Where does the data for Al8Mg4O36Si10 come from?
Al8Mg4O36Si10 data is cross-referenced from materials_project, aflow, cod.
Explore

Related Compounds

Other Aluminosilicates and Zeolite Frameworks in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • aflow — Data from AFLOW (aflow.org). Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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