SiO
SiO has a DFT band gap of 0.48 eV across 478 reported structures in 42 space groups; its reference structure is hexagonal (P6422 (No. 181)). Cross-validated across 3 computational databases.
OSi
At a glance
Key Properties
Cross-validated computational properties for SiO, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.48 eV
Range across DFT structures · ground state: narrow gap
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.357 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Unstable
3 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
478
3 databases, 42 space groups
Validation
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of SiO. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
0.00 / 1.00
Trust tier: low
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
1.319 eV
EAH spread across sources
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
3
jarvis, materials_project, oqmd
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
All match
Crystallography
Reported Structures
Lowest-energy structures reported for SiO, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P6422 (No. 181) | hexagonal | 0.00 | 0.3572 | -1.820 | — |
| P6422 (No. 181) | hexagonal | 0.00 | 0.3572 | -1.820 | — |
| P6422 (No. 181) | hexagonal | 0.00 | 0.4075 | -7.234 | 2.58 |
| — | — | 0.00 | 1.6762 | -0.629 | — |
| — | — | 0.00 | 1.6928 | -0.612 | — |
| — | — | 0.00 | 1.7437 | -0.561 | — |
| — | — | 0.48 | 1.7599 | -0.545 | — |
| — | — | 0.00 | 1.7764 | -0.529 | — |
| — | — | 0.00 | 1.7777 | -0.528 | — |
| — | — | 0.00 | 2.0899 | -0.215 | — |
| — | — | 0.00 | 2.3098 | 0.005 | — |
| P1 (No. 1) | triclinic | — | — | — | 4.40 |
Intellectual Property
Patent Landscape
7 patents reference SiO or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 10340508 | Porous silicon oxide (SiO) anode enabled by a conductive polymer binder and performance enhancement by stabili | — | — |
| 10046973 | Apparatus and method for manufacturing SiO | — | — |
| 12195345 | SiO powder production method and spherical particulate SiO powder | — | — |
| 5017527 | Mechanical seals of SiC-coated graphite by rate-controlled generation of SiO and process therefor | — | — |
| 5110772 | Fabrication of dense SI.sub.3 N.sub.4 ceramics using CaO-TiO.sub.2 SiO.sub. 2 | — | — |
| 10014516 | Method for manufacturing SiO-based carbon nanofiber composite on basis of nickel-copper catalyst using electro | — | — |
| 4401617 | Ceramic cutting tool formed from Si.sub.3 N.sub.4 -Y.sub.2 O.sub.3 -SiO.sub . | — | — |
Reference
Frequently Asked Questions
Common questions about SiO, answered from cross-validated data.
What is the band gap of SiO?
SiO has a DFT-computed band gap of 0.48 eV across 478 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
More questions
Is SiO a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.48 eV (a semiconductor). Measured gaps are typically larger.
Is SiO thermodynamically stable?
SiO has a lowest energy above hull of 0.357 eV/atom (unstable).
What is the crystal structure of SiO?
The reference structure of SiO is hexagonal symmetry, space group P6422 (No. 181).
How many polymorphs of SiO are known?
478 structures of SiO are reported across 3 databases, spanning 42 distinct space groups.
What elements does SiO contain?
SiO contains O and Si (2 elements).
Where does the data for SiO come from?
SiO data is cross-referenced from jarvis, materials_project, oqmd, mpaloe.
Data sources & attribution
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
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