Nd4O14Sn4

Nd4O14Sn4 is a stable, semiconducting perovskite oxide composed of neodymium, tin, and oxygen.

Crystal structure of Nd4O14Sn4 (cubic, Fd-3m (No. 227))
Ground-state structure · Materials Project
Overview

About Nd4O14Sn4

Nd4O14Sn4 is a complex perovskite oxide that occupies a stable position on the thermodynamic convex hull, indicating significant structural integrity. As a semiconducting material, it offers a unique electronic profile that distinguishes it from more common metallic or insulating perovskites. Its existence across multiple reported structures highlights its versatility and potential for structural tuning in solid-state chemistry. This compound serves as a valuable subject for researchers investigating the interplay between rare-earth elements and tin-based oxide frameworks. By leveraging the stability of its lattice, scientists can explore its potential as a functional component in electronic and optoelectronic devices where semiconducting behavior is required.

At a glance

Key Properties

Cross-validated computational properties for Nd4O14Sn4, aggregated across 3 databases.

Band Gap

2.67 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

4
3 databases, 1 space group
Crystallography

Reported Structures

Lowest-energy structures reported for Nd4O14Sn4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Fd-3m (No. 227)cubic2.670.0000-7.7197.08
Fd-3m (No. 227)cubic0.000.5717-7.1486.85
Fd-3m (No. 227)
6.89
Uses

Applications

Where Nd4O14Sn4 is used.

Semiconductor researchSolid-state electronic devicesAdvanced materials science
Reference

Frequently Asked Questions

Common questions about Nd4O14Sn4, answered from cross-validated data.

What is Nd4O14Sn4?

Nd4O14Sn4 is a stable, semiconducting perovskite oxide composed of neodymium, tin, and oxygen.

More questions
What is Nd4O14Sn4 used for?
Nd4O14Sn4 is used in semiconductor research, solid-state electronic devices, and advanced materials science.
What is the band gap of Nd4O14Sn4?
Nd4O14Sn4 has a DFT-computed band gap of 2.67 eV across 4 reported structures.
Is Nd4O14Sn4 a metal, semiconductor, or insulator?
With a band gap up to 2.67 eV it is a semiconductor.
Is Nd4O14Sn4 thermodynamically stable?
Yes — Nd4O14Sn4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Nd4O14Sn4?
The lowest-energy reported polymorph of Nd4O14Sn4 is cubic symmetry, space group Fd-3m (No. 227).
What is the density of Nd4O14Sn4?
The computed density of the ground-state structure of Nd4O14Sn4 is 7.08 g/cm³.
How many polymorphs of Nd4O14Sn4 are known?
4 structures of Nd4O14Sn4 are reported across 3 databases, spanning 1 distinct space group.
What elements does Nd4O14Sn4 contain?
Nd4O14Sn4 contains Nd, O, and Sn (3 elements).
Where does the data for Nd4O14Sn4 come from?
Nd4O14Sn4 data is cross-referenced from materials_project, aflow, omat24.
Comparison

How It Compares

Within the perovskite oxides class.

Within the diverse family of perovskite oxides, Nd4O14Sn4 occupies a specialized niche compared to widely studied members like BaTiO3 or LaAlO3. While many perovskites in this class are characterized by their insulating or ferroelectric properties, this compound distinguishes itself through its semiconducting nature and specific rare-earth composition. Unlike the highly magnetic or catalytic perovskites such as LaMnO3 or LaNiO3, Nd4O14Sn4 provides a stable, semiconducting platform that is particularly relevant for applications requiring controlled electronic transport within an oxide framework.

Explore

Related Compounds

Other Perovskite Oxides in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

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