Mo4Si8
Mo4Si8 has a DFT band gap of Metallic / not reported across 2 reported structures in 2 space groups; its reference structure is tetragonal (I4/mmm (No. 139)). Cross-validated across 1 computational databases.
Key Properties
Cross-validated computational properties for Mo4Si8, aggregated across 1 database.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of Mo4Si8. Tight agreement means computed properties can be trusted without re-running calculations.
Only 1 independent DFT source (materials_project) reports a hull energy for Mo4Si8, so cross-source agreement can't be assessed yet.
Reported Structures
Lowest-energy structures reported for Mo4Si8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I4/mmm (No. 139) | tetragonal | 0.00 | 0.0000 | -15.006 | 6.30 |
| P6222 (No. 180) | hexagonal | 0.09 | 0.0314 | -14.975 | 6.32 |
| P63/mmc (No. 194) | hexagonal | — | — | -6.924 | 6.10 |
| Pa-3 (No. 205) | cubic | — | — | -6.355 | 4.61 |
| I4/mmm (No. 139) | tetragonal | — | — | — | 6.28 |
Synthesis Routes
Literature-extracted synthesis procedures targeting Mo4Si8.
Frequently Asked Questions
Common questions about Mo4Si8, answered from cross-validated data.
What is the band gap of Mo4Si8?
The reported DFT structures of Mo4Si8 show no band gap. Standard DFT often misses gaps (especially in transition-metal oxides), so this is not proof the real material is a metal.
Is Mo4Si8 a metal, semiconductor, or insulator?
What is the crystal structure of Mo4Si8?
What is the density of Mo4Si8?
How many polymorphs of Mo4Si8 are known?
How is Mo4Si8 synthesized?
What elements does Mo4Si8 contain?
Where does the data for Mo4Si8 come from?
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- aflow — Data from AFLOW (aflow.org). Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012). (CC-BY-4.0)
- cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
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