Ho2S3

Ho2S3 is a stable holmium sulfide semiconductor used in materials science research.

HoS
Crystal structure of Ho2S3 (monoclinic, P21/m (No. 11))
Ground-state structure · Materials Project
Overview

About Ho2S3

Ho2S3 is a binary sulfide compound composed of holmium and sulfur. As a thermodynamically stable phase located on the convex hull, it represents a robust material configuration that has been extensively documented across multiple structural databases.

This material exhibits semiconducting electronic behavior, making it a subject of interest for fundamental studies in rare-earth chalcogenides. Its stability and well-defined structural characteristics provide a reliable foundation for exploring the optoelectronic potential of lanthanide-based sulfides.

At a glance

Key Properties

Cross-validated computational properties for Ho2S3, aggregated across 4 databases.

Band Gap

0.61–2.62 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

15
4 databases, 6 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ho2S3. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

Mixed (most: P21/m (No. 11))
Crystallography

Reported Structures

Lowest-energy structures reported for Ho2S3, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——2.340.0000-2.262—
P21/m (No. 11)monoclinic1.460.0000-20.3496.05
Pnma (No. 62)orthorhombic0.650.0000-2.250—
——1.930.0075-2.254—
R-3c (No. 167)trigonal2.470.0080-20.3415.69
Pnma (No. 62)orthorhombic0.610.0106-20.3396.69
P21/m (No. 11)monoclinic1.470.0122-2.238—
——1.530.0127-2.249—
——0.830.0206-2.241—
——2.620.0249-2.237—
R-3c (No. 167)trigonal2.540.0334-2.217—
I-42d (No. 122)tetragonal1.930.0347-20.3156.65
Uses

Applications

Where Ho2S3 is used.

Semiconductor researchRare-earth chalcogenide studiesMaterials science characterization
Reference

Frequently Asked Questions

Common questions about Ho2S3, answered from cross-validated data.

What is Ho2S3?

Ho2S3 is a stable holmium sulfide semiconductor used in materials science research.

More questions
What is Ho2S3 used for?
Ho2S3 is used in semiconductor research, rare-earth chalcogenide studies, and materials science characterization.
What is the band gap of Ho2S3?
Ho2S3 has a DFT-computed band gap of 0.61–2.62 eV across 15 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ho2S3 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 2.62 eV (a semiconductor). Measured gaps are typically larger.
Is Ho2S3 thermodynamically stable?
Yes — Ho2S3 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Ho2S3?
The reference structure of Ho2S3 is monoclinic symmetry, space group P21/m (No. 11).
What is the density of Ho2S3?
The computed density of the ground-state structure of Ho2S3 is 6.05 g/cm³.
How many polymorphs of Ho2S3 are known?
15 structures of Ho2S3 are reported across 4 databases, spanning 6 distinct space groups.
What elements does Ho2S3 contain?
Ho2S3 contains Ho and S (2 elements).
Where does the data for Ho2S3 come from?
Ho2S3 data is cross-referenced from oqmd, materials_project, jarvis, mpaloe.
Comparison

How It Compares

As a stable binary sulfide, Ho2S3 serves as a representative example of the rare-earth sulfide family, demonstrating the structural versatility and electronic consistency typical of this class of materials.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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