HfS2

Hafnium disulfide · Hafnium(IV) sulfide

Hafnium disulfide is a stable, semiconducting material widely studied for its diverse structural configurations and potential use in electronic applications.

HfS
Crystal structure of HfS2 (trigonal, P-3m1 (No. 164))
Ground-state structure · Materials Project
Overview

About Hafnium disulfide

Hafnium disulfide is a thermodynamically stable inorganic compound that exists on the convex hull, indicating significant structural robustness. As a semiconducting material, it has garnered substantial interest in the scientific community for its potential role in next-generation electronic and optoelectronic devices.

The compound is characterized by a high degree of structural variety, with hundreds of reported configurations across various databases. This structural richness makes it a versatile subject for materials research, particularly in the development of thin-film technologies and semiconductor-based components.

At a glance

Key Properties

Cross-validated computational properties for Hafnium disulfide, aggregated across 5 databases.

Band Gap

0.31–2.21 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
4 DFT sources

Structures

242
5 databases, 36 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of HfS2. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.99 / 1.00
Trust tier: high

Hull Spread

0.002 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for HfS2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P-3m1 (No. 164)trigonal1.230.0000-22.2135.80
P-3m1 (No. 164)trigonal1.080.0000-1.705—
——0.000.0018-1.770—
——1.350.0021-1.769—
——1.410.0039-1.768—
——0.980.1008-1.671—
——0.560.1216-1.650—
——0.830.2135-1.558—
——1.120.2149-1.557—
——1.100.2149-1.557—
——0.420.2179-1.554—
——0.760.2185-1.553—
Uses

Applications

Where Hafnium disulfide is used.

Semiconductor researchThin-film electronicsOptoelectronic devices
Reference

Frequently Asked Questions

Common questions about Hafnium disulfide, answered from cross-validated data.

What is HfS2?

Hafnium disulfide is a stable, semiconducting material widely studied for its diverse structural configurations and potential use in electronic applications.

More questions
What is HfS2 used for?
Hafnium disulfide (HfS2) is used in semiconductor research, thin-film electronics, and optoelectronic devices.
What is the band gap of HfS2?
Hafnium disulfide (HfS2) has a DFT-computed band gap of 0.31–2.21 eV across 242 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is HfS2 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 2.21 eV (a semiconductor). Measured gaps are typically larger.
Is HfS2 thermodynamically stable?
Yes — Hafnium disulfide (HfS2) sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of HfS2?
The reference structure of Hafnium disulfide (HfS2) is trigonal symmetry, space group P-3m1 (No. 164).
What is the density of HfS2?
The computed density of the ground-state structure of Hafnium disulfide (HfS2) is 5.80 g/cm³.
How many polymorphs of HfS2 are known?
242 structures of HfS2 are reported across 5 databases, spanning 36 distinct space groups.
What elements does HfS2 contain?
Hafnium disulfide (HfS2) contains Hf and S (2 elements).
Where does the data for HfS2 come from?
HfS2 data is cross-referenced from materials_project, jarvis, oqmd, mpaloe.
Comparison

How It Compares

As a prominent member of the transition metal dichalcogenide family, hafnium disulfide is distinguished by its excellent thermodynamic stability and reliable semiconducting behavior, which positions it as a foundational material for exploring electronic properties in layered systems.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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