HfIN

HfIN is a thermodynamically stable, semiconducting ternary compound containing hafnium, iodine, and nitrogen.

HfIN
Crystal structure of HfIN (trigonal, R-3m (No. 166))
Ground-state structure · Materials Project
Overview

About HfIN

HfIN is a complex inorganic compound composed of hafnium, iodine, and nitrogen. As a thermodynamically stable phase residing on the convex hull, it represents a robust configuration of these elements that is of significant interest for fundamental materials study.

Exhibiting semiconducting electronic character, this material offers unique charge-carrier properties that distinguish it from simple binary nitrides or iodides. Its existence across multiple reported structures highlights its structural versatility and potential for further investigation in high-performance electronic applications.

At a glance

Key Properties

Cross-validated computational properties for HfIN, aggregated across 4 databases.

Band Gap

0.98–1.81 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

7
4 databases, 3 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of HfIN. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.74 / 1.00
Trust tier: medium

Hull Spread

0.064 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for HfIN, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——1.810.0000-1.604—
R-3m (No. 166)trigonal0.990.0000-1.539—
R-3m (No. 166)trigonal0.980.0641-8.1408.33
——1.130.0683-1.535—
P-1 (No. 2)triclinic———5.16
P21/m (No. 11)monoclinic———9.32
P21/m (No. 11)monoclinic———8.53
Uses

Applications

Where HfIN is used.

Semiconductor researchSolid-state materials development
Reference

Frequently Asked Questions

Common questions about HfIN, answered from cross-validated data.

What is HfIN?

HfIN is a thermodynamically stable, semiconducting ternary compound containing hafnium, iodine, and nitrogen.

More questions
What is HfIN used for?
HfIN is used in semiconductor research and solid-state materials development.
What is the band gap of HfIN?
HfIN has a DFT-computed band gap of 0.98–1.81 eV across 7 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is HfIN a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.81 eV (a semiconductor). Measured gaps are typically larger.
Is HfIN thermodynamically stable?
Yes — HfIN sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of HfIN?
The reference structure of HfIN is trigonal symmetry, space group R-3m (No. 166).
How many polymorphs of HfIN are known?
7 structures of HfIN are reported across 4 databases, spanning 3 distinct space groups.
What elements does HfIN contain?
HfIN contains Hf, I, and N (3 elements).
Where does the data for HfIN come from?
HfIN data is cross-referenced from oqmd, jarvis, materials_project, mpaloe.
Comparison

How It Compares

As a unique ternary compound, HfIN occupies a distinct position in materials research, serving as a specialized candidate for exploring the interplay between heavy transition metals, halogens, and pnictogens in a stable solid-state framework.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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