Hf4N8

Hf4N8 has a DFT band gap of 0.58–1.19 eV across 9 reported structures in 5 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Hf4N8, aggregated across 3 databases.

Band Gap

0.58–1.19 eV
Range across DFT structures

Energy Above Hull

0.415 eV/atom
Best (lowest) across sources

Stability

Above hull
2 DFT sources

Structures

9
3 databases, 5 space groups
Reference

Frequently Asked Questions

Common questions about Hf4N8, answered from cross-validated data.

What is the band gap of Hf4N8?

Hf4N8 has a DFT-computed band gap of 0.58–1.19 eV across 9 reported structures.

More questions
Is Hf4N8 a metal, semiconductor, or insulator?
With a band gap up to 1.19 eV it is a semiconductor.
Is Hf4N8 thermodynamically stable?
Hf4N8 has a lowest energy above hull of 0.415 eV/atom (above hull).
How many polymorphs of Hf4N8 are known?
9 structures of Hf4N8 are reported across 3 databases, spanning 5 distinct space groups.
What elements does Hf4N8 contain?
Hf4N8 contains Hf and N (2 elements).
Where does the data for Hf4N8 come from?
Hf4N8 data is cross-referenced from latticegraph.
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Related Compounds

Other Ultra-High-Temperature Ceramics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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