Hf2N4

Hf2N4 has a DFT band gap of 0.58–1.19 eV across 19 reported structures in 13 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Hf2N4, aggregated across 2 databases.

Band Gap

0.58–1.19 eV
Range across DFT structures

Energy Above Hull

0.415 eV/atom
Best (lowest) across sources

Stability

Above hull
1 DFT source

Structures

19
2 databases, 13 space groups
Reference

Frequently Asked Questions

Common questions about Hf2N4, answered from cross-validated data.

What is the band gap of Hf2N4?

Hf2N4 has a DFT-computed band gap of 0.58–1.19 eV across 19 reported structures.

More questions
Is Hf2N4 a metal, semiconductor, or insulator?
With a band gap up to 1.19 eV it is a semiconductor.
Is Hf2N4 thermodynamically stable?
Hf2N4 has a lowest energy above hull of 0.415 eV/atom (above hull).
How many polymorphs of Hf2N4 are known?
19 structures of Hf2N4 are reported across 2 databases, spanning 13 distinct space groups.
What elements does Hf2N4 contain?
Hf2N4 contains Hf and N (2 elements).
Where does the data for Hf2N4 come from?
Hf2N4 data is cross-referenced from latticegraph.
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Related Compounds

Other Ultra-High-Temperature Ceramics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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