GaTe
Gallium telluride · Gallium(II) telluride
Gallium telluride is a layered semiconductor material composed of gallium and tellurium. It is primarily studied for its potential in optoelectronic devices and advanced electronic components due to its unique structural and light-responsive properties.
GaTe
Overview
Key Properties
Cross-validated computational properties for Gallium telluride, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.79–1.01 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
3 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
41
5 databases, 12 space groups
Validation
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of GaTe. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
1.00 / 1.00
Trust tier: medium
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
0.000 eV
EAH spread across sources
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
2
jarvis, materials_project
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
All match
Crystallography
Reported Structures
Lowest-energy structures reported for GaTe, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 1.01 | 0.0000 | -18.873 | 5.15 |
| P63/mmc (No. 194) | hexagonal | 0.79 | 0.0044 | -18.869 | 5.15 |
| Cm (No. 8) | Monoclinic | — | — | — | 4.35 |
| P63/mmc (No. 194) | Hexagonal | — | — | — | 6.32 |
| C2/m (No. 12) | — | — | — | — | — |
| P-6m2 (No. 187) | — | — | — | — | — |
| Pm (No. 6) | Monoclinic | — | — | — | 5.09 |
| No. 0 | unknown | — | — | — | 1.37 |
| P63/mmc (No. 194) | — | — | — | — | — |
| Pm (No. 6) | Monoclinic | — | — | — | 3.76 |
| Pm (No. 6) | Monoclinic | — | — | — | 3.77 |
| Pm (No. 6) | Monoclinic | — | — | — | 3.81 |
Uses
Applications
Where Gallium telluride is used.
PhotodetectorsOptoelectronic sensorsSemiconductor researchThin-film device development
Reference
Frequently Asked Questions
Common questions about Gallium telluride, answered from cross-validated data.
What is GaTe?
Gallium telluride is a layered semiconductor material composed of gallium and tellurium. It is primarily studied for its potential in optoelectronic devices and advanced electronic components due to its unique structural and light-responsive properties.
More questions
What is GaTe used for?
Gallium telluride (GaTe) is used in photodetectors, optoelectronic sensors, semiconductor research, and thin-film device development.
What is the band gap of GaTe?
Gallium telluride (GaTe) has a DFT-computed band gap of 0.79–1.01 eV across 41 reported structures.
Is GaTe a metal, semiconductor, or insulator?
With a band gap up to 1.01 eV it is a semiconductor.
Is GaTe thermodynamically stable?
Yes — Gallium telluride (GaTe) sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of GaTe?
The lowest-energy reported polymorph of Gallium telluride (GaTe) is monoclinic symmetry, space group C2/m (No. 12).
What is the density of GaTe?
The computed density of the ground-state structure of Gallium telluride (GaTe) is 5.15 g/cm³.
How many polymorphs of GaTe are known?
41 structures of GaTe are reported across 5 databases, spanning 12 distinct space groups.
What elements does GaTe contain?
Gallium telluride (GaTe) contains Ga and Te (2 elements).
Where does the data for GaTe come from?
GaTe data is cross-referenced from materials_project, mpaloe, jarvis, cod, omat24.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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