Fe2Sn1Ti1

Fe2Sn1Ti1 is a stable, semimetallic half-Heusler compound used in materials science research for its unique electronic properties.

Crystal structure of Fe2Sn1Ti1 (cubic, Fm-3m (No. 225))
Ground-state structure · Materials Project
Overview

About Fe2Sn1Ti1

Fe2Sn1Ti1 belongs to the half-Heusler class of materials, which are widely investigated for their unique electronic and thermal transport properties. This specific composition is notable for its thermodynamic stability, as it sits on the convex hull, indicating a robust structural configuration that makes it a reliable subject for experimental and computational research.

As a near-zero-gap semimetallic material, Fe2Sn1Ti1 offers intriguing possibilities for electronic and energy-harvesting applications. Its structural integrity within the half-Heusler family positions it as an important candidate for understanding the relationship between composition and thermoelectric performance in complex ternary systems.

At a glance

Key Properties

Cross-validated computational properties for Fe2Sn1Ti1, aggregated across 2 databases.

Band Gap

0.05 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

33
2 databases, 16 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Fe2Sn1Ti1, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Fm-3m (No. 225)cubic0.050.0000-7.4818.59
Cmmm (No. 65)
F-43m (No. 216)
P4/mmm (No. 123)
Pmm2 (No. 25)
Fm-3m (No. 225)
P2/m (No. 10)
Fm-3m (No. 225)
R3m (No. 160)
C2/m (No. 12)
P4/mmm (No. 123)
Fm-3m (No. 225)
Uses

Applications

Where Fe2Sn1Ti1 is used.

Thermoelectric energy conversion researchSolid-state physics studiesElectronic material characterization
Reference

Frequently Asked Questions

Common questions about Fe2Sn1Ti1, answered from cross-validated data.

What is Fe2Sn1Ti1?

Fe2Sn1Ti1 is a stable, semimetallic half-Heusler compound used in materials science research for its unique electronic properties.

More questions
What is Fe2Sn1Ti1 used for?
Fe2Sn1Ti1 is used in thermoelectric energy conversion research, solid-state physics studies, and electronic material characterization.
What is the band gap of Fe2Sn1Ti1?
Fe2Sn1Ti1 has a DFT-computed band gap of 0.05 eV across 33 reported structures.
Is Fe2Sn1Ti1 a metal, semiconductor, or insulator?
With a near-zero band gap it behaves as a (semi)metal.
Is Fe2Sn1Ti1 thermodynamically stable?
Yes — Fe2Sn1Ti1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Fe2Sn1Ti1?
The lowest-energy reported polymorph of Fe2Sn1Ti1 is cubic symmetry, space group Fm-3m (No. 225).
What is the density of Fe2Sn1Ti1?
The computed density of the ground-state structure of Fe2Sn1Ti1 is 8.59 g/cm³.
How many polymorphs of Fe2Sn1Ti1 are known?
33 structures of Fe2Sn1Ti1 are reported across 2 databases, spanning 16 distinct space groups.
What elements does Fe2Sn1Ti1 contain?
Fe2Sn1Ti1 contains Fe, Sn, and Ti (3 elements).
Where does the data for Fe2Sn1Ti1 come from?
Fe2Sn1Ti1 data is cross-referenced from materials_project, aflow.
Comparison

How It Compares

Within the half-heusler thermoelectrics class.

Within the diverse family of half-Heusler thermoelectrics, Fe2Sn1Ti1 stands out due to its distinct electronic character compared to more traditional semiconducting members like ZrNiSn or HfNiSn. While many siblings in this class are optimized for high-performance power generation through band-gap engineering, the semimetallic nature of this compound provides a different baseline for investigating charge carrier dynamics and thermal conductivity in metallic-like Heusler phases.

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Related Compounds

Other Half-Heusler Thermoelectrics in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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