Bi4Pb2S8

Bi4Pb2S8 has a DFT band gap of 1.08 eV across 14 reported structures in 2 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Bi4Pb2S8, aggregated across 3 databases.

Band Gap

1.08 eV
Range across DFT structures

Energy Above Hull

0.006 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

14
3 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about Bi4Pb2S8, answered from cross-validated data.

What is the band gap of Bi4Pb2S8?

Bi4Pb2S8 has a DFT-computed band gap of 1.08 eV across 14 reported structures.

More questions
Is Bi4Pb2S8 a metal, semiconductor, or insulator?
With a band gap up to 1.08 eV it is a semiconductor.
Is Bi4Pb2S8 thermodynamically stable?
Bi4Pb2S8 has a lowest energy above hull of 0.006 eV/atom (near hull (likely stable)).
How many polymorphs of Bi4Pb2S8 are known?
14 structures of Bi4Pb2S8 are reported across 3 databases, spanning 2 distinct space groups.
What elements does Bi4Pb2S8 contain?
Bi4Pb2S8 contains Bi, Pb, and S (3 elements).
Where does the data for Bi4Pb2S8 come from?
Bi4Pb2S8 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Lead Chalcogenide Thermoelectrics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze Bi4Pb2S8 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →