Al4C3

Aluminum carbide · Aluminium carbide

Aluminum carbide is a stable, semiconducting inorganic compound composed of aluminum and carbon.

AlC
Crystal structure of Al4C3 (trigonal, R3m (No. 160))
Ground-state structure · Materials Project
Overview

About Aluminum carbide

Aluminum carbide is a distinct inorganic compound that exists as a thermodynamically stable phase on the convex hull. As a semiconducting material, it possesses unique electronic properties that distinguish it from simple metallic alloys or purely covalent ceramics.

Its structural complexity is highlighted by the extensive number of reported configurations found across major materials databases. This richness in structural data underscores its importance as a subject of ongoing research in advanced materials science and solid-state chemistry.

At a glance

Key Properties

Cross-validated computational properties for Aluminum carbide, aggregated across 6 databases.

Band Gap

0.06–1.53 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
4 DFT sources

Structures

68
6 databases, 15 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Al4C3. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Al4C3, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R-3m (No. 166)trigonal1.530.0000-0.244—
——1.470.0000-0.098—
R-3m (No. 166)trigonal1.320.0000-8.3482.99
——1.380.0001-0.098—
P1 (No. 1)triclinic0.000.4070-7.9413.00
P1 (No. 1)triclinic0.060.43510.191—
P1 (No. 1)triclinic0.000.5853-7.7632.97
P1 (No. 1)triclinic0.000.64180.398—
R-3m (No. 166)trigonal1.32—-6.1892.93
R-3m (No. 166)trigonal1.32—-6.1892.93
R-3m (No. 166)trigonal1.32—-6.1892.93
R-3m (No. 166)trigonal1.32—-6.1892.93
Uses

Applications

Where Aluminum carbide is used.

AbrasivesMetallurgical additivesCatalytic materialsReinforcement in metal matrix composites
Reference

Frequently Asked Questions

Common questions about Aluminum carbide, answered from cross-validated data.

What is Al4C3?

Aluminum carbide is a stable, semiconducting inorganic compound composed of aluminum and carbon.

More questions
What is Al4C3 used for?
Aluminum carbide (Al4C3) is used in abrasives, metallurgical additives, catalytic materials, and reinforcement in metal matrix composites.
What is the band gap of Al4C3?
Aluminum carbide (Al4C3) has a DFT-computed band gap of 0.06–1.53 eV across 68 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Al4C3 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.53 eV (a semiconductor). Measured gaps are typically larger.
Is Al4C3 thermodynamically stable?
Yes — Aluminum carbide (Al4C3) sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Al4C3?
The reference structure of Aluminum carbide (Al4C3) is trigonal symmetry, space group R3m (No. 160).
What is the density of Al4C3?
The computed density of the ground-state structure of Aluminum carbide (Al4C3) is 3.00 g/cm³.
How many polymorphs of Al4C3 are known?
68 structures of Al4C3 are reported across 6 databases, spanning 15 distinct space groups.
What elements does Al4C3 contain?
Aluminum carbide (Al4C3) contains Al and C (2 elements).
Where does the data for Al4C3 come from?
Al4C3 data is cross-referenced from jarvis, oqmd, materials_project, aflow, mpaloe, cod.
Comparison

How It Compares

As a standalone material in this context, aluminum carbide represents a foundational example of a stable binary carbide. Unlike more volatile or metastable phases, its position on the convex hull ensures robust structural integrity, making it a reliable benchmark for studying the interplay between aluminum and carbon in semiconducting systems.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • aflow — Data from AFLOW (aflow.org). Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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