V4O7

V4O7 has a DFT band gap of 0.31–1.31 eV across 16 reported structures in 2 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for V4O7, aggregated across 4 databases.

Band Gap

0.31–1.31 eV
Range across DFT structures

Energy Above Hull

0.037 eV/atom
Best (lowest) across sources

Stability

Metastable
2 DFT sources

Structures

16
4 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about V4O7, answered from cross-validated data.

What is the band gap of V4O7?

V4O7 has a DFT-computed band gap of 0.31–1.31 eV across 16 reported structures.

More questions
Is V4O7 a metal, semiconductor, or insulator?
With a band gap up to 1.31 eV it is a semiconductor.
Is V4O7 thermodynamically stable?
V4O7 has a lowest energy above hull of 0.037 eV/atom (metastable).
How many polymorphs of V4O7 are known?
16 structures of V4O7 are reported across 4 databases, spanning 2 distinct space groups.
What elements does V4O7 contain?
V4O7 contains O and V (2 elements).
Where does the data for V4O7 come from?
V4O7 data is cross-referenced from latticegraph.
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Related Compounds

Other Electrochromic and Refractory-Metal Oxides in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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