V4O7
V4O7 has a DFT band gap of 0.31–1.31 eV across 16 reported structures in 2 space groups. Cross-validated across 4 computational databases.
At a glance
Key Properties
Cross-validated computational properties for V4O7, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.31–1.31 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.037 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Metastable
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
16
4 databases, 2 space groups
Reference
Frequently Asked Questions
Common questions about V4O7, answered from cross-validated data.
What is the band gap of V4O7?
V4O7 has a DFT-computed band gap of 0.31–1.31 eV across 16 reported structures.
More questions
Is V4O7 a metal, semiconductor, or insulator?
With a band gap up to 1.31 eV it is a semiconductor.
Is V4O7 thermodynamically stable?
V4O7 has a lowest energy above hull of 0.037 eV/atom (metastable).
How many polymorphs of V4O7 are known?
16 structures of V4O7 are reported across 4 databases, spanning 2 distinct space groups.
What elements does V4O7 contain?
V4O7 contains O and V (2 elements).
Where does the data for V4O7 come from?
V4O7 data is cross-referenced from latticegraph.
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Related Compounds
Other Electrochromic and Refractory-Metal Oxides in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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