O8W3

O8W3 has a DFT band gap of 1.56–2.73 eV across 9 reported structures in 8 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for O8W3, aggregated across 3 databases.

Band Gap

1.56–2.73 eV
Range across DFT structures

Energy Above Hull

0.009 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

9
3 databases, 8 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of O8W3. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: medium

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

2
aflow, materials_project

Space Group Consensus

All match
Reference

Frequently Asked Questions

Common questions about O8W3, answered from cross-validated data.

What is the band gap of O8W3?

O8W3 has a DFT-computed band gap of 1.56–2.73 eV across 9 reported structures.

More questions
Is O8W3 a metal, semiconductor, or insulator?
With a band gap up to 2.73 eV it is a semiconductor.
Is O8W3 thermodynamically stable?
O8W3 has a lowest energy above hull of 0.009 eV/atom (near hull (likely stable)).
How many polymorphs of O8W3 are known?
9 structures of O8W3 are reported across 3 databases, spanning 8 distinct space groups.
What elements does O8W3 contain?
O8W3 contains O and W (2 elements).
Where does the data for O8W3 come from?
O8W3 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Electrochromic and Refractory-Metal Oxides in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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