O13V6

O13V6 has a DFT band gap of 0.03–0.52 eV across 14 reported structures in 8 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for O13V6, aggregated across 3 databases.

Band Gap

0.03–0.52 eV
Range across DFT structures

Energy Above Hull

0.043 eV/atom
Best (lowest) across sources

Stability

Metastable
1 DFT source

Structures

14
3 databases, 8 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of O13V6. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: medium

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

2
aflow, materials_project

Space Group Consensus

All match
Reference

Frequently Asked Questions

Common questions about O13V6, answered from cross-validated data.

What is the band gap of O13V6?

O13V6 has a DFT-computed band gap of 0.03–0.52 eV across 14 reported structures.

More questions
Is O13V6 a metal, semiconductor, or insulator?
With a band gap up to 0.52 eV it is a semiconductor.
Is O13V6 thermodynamically stable?
O13V6 has a lowest energy above hull of 0.043 eV/atom (metastable).
How many polymorphs of O13V6 are known?
14 structures of O13V6 are reported across 3 databases, spanning 8 distinct space groups.
What elements does O13V6 contain?
O13V6 contains O and V (2 elements).
Where does the data for O13V6 come from?
O13V6 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Electrochromic and Refractory-Metal Oxides in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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