Nb4O10

Nb4O10 has a DFT band gap of 0.98–2.60 eV across 22 reported structures in 10 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Nb4O10, aggregated across 3 databases.

Band Gap

0.98–2.60 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

22
3 databases, 10 space groups
Reference

Frequently Asked Questions

Common questions about Nb4O10, answered from cross-validated data.

What is the band gap of Nb4O10?

Nb4O10 has a DFT-computed band gap of 0.98–2.60 eV across 22 reported structures.

More questions
Is Nb4O10 a metal, semiconductor, or insulator?
With a band gap up to 2.60 eV it is a semiconductor.
Is Nb4O10 thermodynamically stable?
Yes — Nb4O10 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Nb4O10 are known?
22 structures of Nb4O10 are reported across 3 databases, spanning 10 distinct space groups.
What elements does Nb4O10 contain?
Nb4O10 contains Nb and O (2 elements).
Where does the data for Nb4O10 come from?
Nb4O10 data is cross-referenced from latticegraph.
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Related Compounds

Other Electrochromic and Refractory-Metal Oxides in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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