Cs4Se6Sn2
Cs4Se6Sn2 is a thermodynamically stable semiconducting material investigated for its potential utility in advanced photovoltaic and optoelectronic technologies.
About Cs4Se6Sn2
Cs4Se6Sn2 is a semiconducting compound that occupies a distinct position within the broader family of perovskite-related materials. Its thermodynamic stability on the convex hull suggests a robust structural framework, making it a subject of interest for researchers exploring stable alternatives in optoelectronic applications.
This material is primarily studied for its potential role in next-generation photovoltaic technologies. By leveraging its unique electronic character, scientists aim to utilize such compounds to overcome stability and performance challenges inherent in conventional lead-based solar cell architectures.
Key Properties
Cross-validated computational properties for Cs4Se6Sn2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Cs4Se6Sn2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 1.72 | 0.0000 | -20.750 | 4.17 |
| C2/m (No. 12) | — | — | — | — | — |
| — | — | — | — | — | 3.74 |
Applications
Where Cs4Se6Sn2 is used.
Frequently Asked Questions
Common questions about Cs4Se6Sn2, answered from cross-validated data.
What is Cs4Se6Sn2?
Cs4Se6Sn2 is a thermodynamically stable semiconducting material investigated for its potential utility in advanced photovoltaic and optoelectronic technologies.
What is Cs4Se6Sn2 used for?
What is the band gap of Cs4Se6Sn2?
Is Cs4Se6Sn2 a metal, semiconductor, or insulator?
Is Cs4Se6Sn2 thermodynamically stable?
What is the crystal structure of Cs4Se6Sn2?
What is the density of Cs4Se6Sn2?
How many polymorphs of Cs4Se6Sn2 are known?
What elements does Cs4Se6Sn2 contain?
Where does the data for Cs4Se6Sn2 come from?
How It Compares
Within the halide perovskite photovoltaics class.
Unlike the widely recognized lead-halide perovskite CsPbBr3, which is frequently studied for its high efficiency but faces toxicity and stability concerns, Cs4Se6Sn2 represents a more specialized structural variant. While it shares the perovskite-inspired lineage of compounds like CsSnI3, its specific elemental composition offers a different pathway for tuning electronic properties and structural durability within the class.
Related Compounds
Other Halide Perovskite Photovoltaics in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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