Cs4Ge2Se6
Cs4Ge2Se6 is a thermodynamically stable semiconducting compound used in materials research for optoelectronic and photovoltaic applications.
About Cs4Ge2Se6
Cs4Ge2Se6 is a semiconducting material characterized by its thermodynamic stability on the convex hull. As a distinct member of the broader halide perovskite and chalcogenide-related families, it represents a stable structural arrangement that is of significant interest for fundamental materials research.
The compound is primarily utilized in the study of semiconductor physics and optoelectronic applications. Its stable nature makes it a compelling candidate for researchers investigating the relationship between structural composition and electronic performance in complex crystalline systems.
Key Properties
Cross-validated computational properties for Cs4Ge2Se6, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Cs4Ge2Se6, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 1.66 | 0.0000 | -3.953 | 4.09 |
| — | — | — | — | — | 3.99 |
| C2/m (No. 12) | — | — | — | — | — |
Applications
Where Cs4Ge2Se6 is used.
Frequently Asked Questions
Common questions about Cs4Ge2Se6, answered from cross-validated data.
What is Cs4Ge2Se6?
Cs4Ge2Se6 is a thermodynamically stable semiconducting compound used in materials research for optoelectronic and photovoltaic applications.
What is Cs4Ge2Se6 used for?
What is the band gap of Cs4Ge2Se6?
Is Cs4Ge2Se6 a metal, semiconductor, or insulator?
Is Cs4Ge2Se6 thermodynamically stable?
What is the crystal structure of Cs4Ge2Se6?
What is the density of Cs4Ge2Se6?
How many polymorphs of Cs4Ge2Se6 are known?
What elements does Cs4Ge2Se6 contain?
Where does the data for Cs4Ge2Se6 come from?
How It Compares
Within the halide perovskite photovoltaics class.
Unlike the more commonly studied halide-based perovskites such as CsPbBr3 or CsSnI3, which often face challenges regarding environmental stability, Cs4Ge2Se6 stands out for its inherent thermodynamic stability. While many members of this class are heavily optimized for direct solar energy conversion, this compound serves as a critical structural benchmark for understanding how germanium-based chalcogenides behave in comparison to their tin or lead-based counterparts.
Related Compounds
Other Halide Perovskite Photovoltaics in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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