Cl6F20K6Sn10

Cl6F20K6Sn10 is a thermodynamically stable, wide-gap insulating halide compound used in advanced materials research.

Crystal structure of Cl6F20K6Sn10 (orthorhombic, Cmcm (No. 63))
Ground-state structure · Materials Project
Overview

About Cl6F20K6Sn10

Cl6F20K6Sn10 is a complex halide compound that functions as a wide-gap insulator. Its position on the convex hull indicates high thermodynamic stability, making it a notable candidate for structural studies within the broader halide perovskite research landscape.

This material is primarily investigated for its unique electronic properties and potential utility in optoelectronic applications. By leveraging its stable crystalline framework, researchers utilize this compound to better understand the behavior of complex tin-based halides in high-performance photovoltaic systems.

At a glance

Key Properties

Cross-validated computational properties for Cl6F20K6Sn10, aggregated across 2 databases.

Band Gap

3.23 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

2
2 databases, 1 space group
Crystallography

Reported Structures

Lowest-energy structures reported for Cl6F20K6Sn10, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cmcm (No. 63)orthorhombic3.230.0000-4.7883.95
Cmcm (No. 63)
Uses

Applications

Where Cl6F20K6Sn10 is used.

Photovoltaic material researchOptoelectronic device developmentSolid-state chemistry studies
Intellectual Property

Patent Landscape

3 patents reference Cl6F20K6Sn10 or close compositional variants.

PatentTitleAssigneeGranted
8248032Charging system for prioritizing load consumption in a notebook computer
8263193Vacuum treatment method
8268035Process for producing refractory metal alloy powders
Reference

Frequently Asked Questions

Common questions about Cl6F20K6Sn10, answered from cross-validated data.

What is Cl6F20K6Sn10?

Cl6F20K6Sn10 is a thermodynamically stable, wide-gap insulating halide compound used in advanced materials research.

More questions
What is Cl6F20K6Sn10 used for?
Cl6F20K6Sn10 is used in photovoltaic material research, optoelectronic device development, and solid-state chemistry studies.
What is the band gap of Cl6F20K6Sn10?
Cl6F20K6Sn10 has a DFT-computed band gap of 3.23 eV across 2 reported structures.
Is Cl6F20K6Sn10 a metal, semiconductor, or insulator?
With a wide band gap up to 3.23 eV it is an insulator / wide-band-gap material.
Is Cl6F20K6Sn10 thermodynamically stable?
Yes — Cl6F20K6Sn10 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Cl6F20K6Sn10?
The lowest-energy reported polymorph of Cl6F20K6Sn10 is orthorhombic symmetry, space group Cmcm (No. 63).
What is the density of Cl6F20K6Sn10?
The computed density of the ground-state structure of Cl6F20K6Sn10 is 3.95 g/cm³.
How many polymorphs of Cl6F20K6Sn10 are known?
2 structures of Cl6F20K6Sn10 are reported across 2 databases, spanning 1 distinct space group.
What elements does Cl6F20K6Sn10 contain?
Cl6F20K6Sn10 contains Cl, F, K, and Sn (4 elements).
Where does the data for Cl6F20K6Sn10 come from?
Cl6F20K6Sn10 data is cross-referenced from materials_project, aflow.
Comparison

How It Compares

Within the halide perovskite photovoltaics class.

Unlike the well-known, narrow-gap semiconducting perovskites such as CsSnI3 or CsPbBr3, which are frequently optimized for light absorption, Cl6F20K6Sn10 acts as a wide-gap insulator. This distinction positions it as a specialized structural component rather than a primary light-harvesting layer, contrasting with the highly conductive behavior typically sought in the halide perovskite class.

Explore

Related Compounds

Other Halide Perovskite Photovoltaics in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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