As8Cd4Ge4K4
This compound is a complex quaternary semiconductor material composed of arsenic, cadmium, germanium, and potassium. It is primarily studied in academic research for its structural properties and potential utility in electronic or optoelectronic device development.
Key Properties
Cross-validated computational properties for As8Cd4Ge4K4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for As8Cd4Ge4K4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 0.69 | 0.0000 | -3.498 | 4.43 |
| No. 0 | unknown | — | — | — | 2.38 |
| — | — | — | — | — | 4.11 |
Applications
Where As8Cd4Ge4K4 is used.
Frequently Asked Questions
Common questions about As8Cd4Ge4K4, answered from cross-validated data.
What is As8Cd4Ge4K4?
This compound is a complex quaternary semiconductor material composed of arsenic, cadmium, germanium, and potassium. It is primarily studied in academic research for its structural properties and potential utility in electronic or optoelectronic device development.
What is As8Cd4Ge4K4 used for?
What is the band gap of As8Cd4Ge4K4?
Is As8Cd4Ge4K4 a metal, semiconductor, or insulator?
Is As8Cd4Ge4K4 thermodynamically stable?
What is the crystal structure of As8Cd4Ge4K4?
What is the density of As8Cd4Ge4K4?
How many polymorphs of As8Cd4Ge4K4 are known?
What elements does As8Cd4Ge4K4 contain?
Where does the data for As8Cd4Ge4K4 come from?
Related Compounds
Other Halide Perovskite Photovoltaics in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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