Al4O10Si2

Al4O10Si2 has a DFT band gap of 1.31–5.75 eV across 23 reported structures in 7 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Al4O10Si2, aggregated across 3 databases.

Band Gap

1.31–5.75 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

23
3 databases, 7 space groups
Reference

Frequently Asked Questions

Common questions about Al4O10Si2, answered from cross-validated data.

What is the band gap of Al4O10Si2?

Al4O10Si2 has a DFT-computed band gap of 1.31–5.75 eV across 23 reported structures.

More questions
Is Al4O10Si2 a metal, semiconductor, or insulator?
With a wide band gap up to 5.75 eV it is an insulator / wide-band-gap material.
Is Al4O10Si2 thermodynamically stable?
Yes — Al4O10Si2 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Al4O10Si2 are known?
23 structures of Al4O10Si2 are reported across 3 databases, spanning 7 distinct space groups.
What elements does Al4O10Si2 contain?
Al4O10Si2 contains Al, O, and Si (3 elements).
Where does the data for Al4O10Si2 come from?
Al4O10Si2 data is cross-referenced from latticegraph.
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Related Compounds

Other Aluminosilicates and Zeolite Frameworks in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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