Al4Cs4O16Si4

Al4Cs4O16Si4 is a stable, insulating aluminosilicate framework material containing cesium that is studied for its unique structural properties.

Crystal structure of Al4Cs4O16Si4 (orthorhombic, Pna21 (No. 33))
Ground-state structure · Materials Project
Overview

About Al4Cs4O16Si4

Al4Cs4O16Si4 is a complex aluminosilicate characterized by its robust framework structure. As a thermodynamically stable member of the zeolite family, it maintains a wide-gap insulating electronic profile, making it an intriguing candidate for structural and catalytic investigations.

Its significance lies in its structural integrity and the specific arrangement of aluminum, silicon, and cesium within its lattice. Researchers utilize this compound to better understand the stability and behavior of alkali-metal-doped aluminosilicates in various chemical environments.

At a glance

Key Properties

Cross-validated computational properties for Al4Cs4O16Si4, aggregated across 3 databases.

Band Gap

4.47 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

6
3 databases, 5 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Al4Cs4O16Si4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pna21 (No. 33)orthorhombic4.470.0000-7.4543.50
Pnma (No. 62)orthorhombic4.460.0002-7.4543.52
No. 0unknown0.92
P1 (No. 1)
Pna21 (No. 33)
Pc (No. 7)
Uses

Applications

Where Al4Cs4O16Si4 is used.

Zeolite framework researchCatalysis studiesMaterials science structural modeling
Reference

Frequently Asked Questions

Common questions about Al4Cs4O16Si4, answered from cross-validated data.

What is Al4Cs4O16Si4?

Al4Cs4O16Si4 is a stable, insulating aluminosilicate framework material containing cesium that is studied for its unique structural properties.

More questions
What is Al4Cs4O16Si4 used for?
Al4Cs4O16Si4 is used in zeolite framework research, catalysis studies, and materials science structural modeling.
What is the band gap of Al4Cs4O16Si4?
Al4Cs4O16Si4 has a DFT-computed band gap of 4.47 eV across 6 reported structures.
Is Al4Cs4O16Si4 a metal, semiconductor, or insulator?
With a wide band gap up to 4.47 eV it is an insulator / wide-band-gap material.
Is Al4Cs4O16Si4 thermodynamically stable?
Yes — Al4Cs4O16Si4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Al4Cs4O16Si4?
The lowest-energy reported polymorph of Al4Cs4O16Si4 is orthorhombic symmetry, space group Pna21 (No. 33).
What is the density of Al4Cs4O16Si4?
The computed density of the ground-state structure of Al4Cs4O16Si4 is 3.50 g/cm³.
How many polymorphs of Al4Cs4O16Si4 are known?
6 structures of Al4Cs4O16Si4 are reported across 3 databases, spanning 5 distinct space groups.
What elements does Al4Cs4O16Si4 contain?
Al4Cs4O16Si4 contains Al, Cs, O, and Si (4 elements).
Where does the data for Al4Cs4O16Si4 come from?
Al4Cs4O16Si4 data is cross-referenced from materials_project, cod, aflow.
Comparison

How It Compares

Within the aluminosilicates and zeolite frameworks class.

Within the diverse class of aluminosilicates, Al4Cs4O16Si4 stands out due to the inclusion of large cesium cations within its framework, distinguishing it from more common alkali-based structures like KAlSiO4 or NaAlSi3O8. While minerals like Al2SiO5 exist as dense, naturally occurring phases, this compound represents a more specialized, synthetic-leaning framework architecture that emphasizes the influence of large interstitial cations on overall lattice stability.

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Related Compounds

Other Aluminosilicates and Zeolite Frameworks in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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