Al1O3Si1

Al1O3Si1 has a DFT band gap of 0.36–3.03 eV across 10 reported structures in 8 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Al1O3Si1, aggregated across 3 databases.

Band Gap

0.36–3.03 eV
Range across DFT structures

Energy Above Hull

0.091 eV/atom
Best (lowest) across sources

Stability

Metastable
1 DFT source

Structures

10
3 databases, 8 space groups
Reference

Frequently Asked Questions

Common questions about Al1O3Si1, answered from cross-validated data.

What is the band gap of Al1O3Si1?

Al1O3Si1 has a DFT-computed band gap of 0.36–3.03 eV across 10 reported structures.

More questions
Is Al1O3Si1 a metal, semiconductor, or insulator?
With a wide band gap up to 3.03 eV it is an insulator / wide-band-gap material.
Is Al1O3Si1 thermodynamically stable?
Al1O3Si1 has a lowest energy above hull of 0.091 eV/atom (metastable).
How many polymorphs of Al1O3Si1 are known?
10 structures of Al1O3Si1 are reported across 3 databases, spanning 8 distinct space groups.
What elements does Al1O3Si1 contain?
Al1O3Si1 contains Al, O, and Si (3 elements).
Where does the data for Al1O3Si1 come from?
Al1O3Si1 data is cross-referenced from latticegraph.
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Related Compounds

Other Aluminosilicates and Zeolite Frameworks in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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