VBO4

VBO4 is a stable, semiconducting vanadium borate compound characterized by its structural versatility and potential for electronic applications.

BOV
Crystal structure of VBO4 (tetragonal, I-4 (No. 82))
Ground-state structure · Materials Project
Overview

About VBO4

VBO4 is a semiconducting compound composed of vanadium, boron, and oxygen. As a thermodynamically stable phase residing on the convex hull, it represents a robust configuration of these elements that is of significant interest for fundamental materials research. Its electronic character suggests potential for specialized applications in semiconductor technology where specific band structures are required. The material is characterized by a notable structural diversity, with multiple reported configurations across various databases, highlighting its complex and flexible coordination environment. This structural richness makes it a compelling subject for researchers investigating the interplay between transition metals and borate frameworks.

At a glance

Key Properties

Cross-validated computational properties for VBO4, aggregated across 3 databases.

Band Gap

1.36–3.18 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.022 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

12
3 databases, 2 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of VBO4. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.83 / 1.00
Trust tier: high

Hull Spread

0.041 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for VBO4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
I-4 (No. 82)tetragonal2.920.0000-8.4412.47
I-4 (No. 82)tetragonal2.780.0220-2.437—
I-4 (No. 82)tetragonal2.770.0251-2.434—
I-4 (No. 82)tetragonal2.750.0325-2.426—
——3.180.0413-2.372—
P21/c (No. 14)monoclinic2.030.0682-2.391—
P-1 (No. 2)triclinic2.630.0682-8.3732.86
P21/c (No. 14)monoclinic2.210.0887-8.3523.07
——1.360.1589-2.254—
P21/c (No. 14)monoclinic———3.14
P21/c (No. 14)monoclinic———3.07
I-4 (No. 82)tetragonal———2.45
Uses

Applications

Where VBO4 is used.

Semiconductor researchMaterials science developmentElectronic component prototyping
Reference

Frequently Asked Questions

Common questions about VBO4, answered from cross-validated data.

What is VBO4?

VBO4 is a stable, semiconducting vanadium borate compound characterized by its structural versatility and potential for electronic applications.

More questions
What is VBO4 used for?
VBO4 is used in semiconductor research, materials science development, and electronic component prototyping.
What is the band gap of VBO4?
VBO4 has a DFT-computed band gap of 1.36–3.18 eV across 12 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is VBO4 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 3.18 eV (an insulator or wide-band-gap material).
Is VBO4 thermodynamically stable?
VBO4 has a lowest energy above hull of 0.022 eV/atom (stable).
What is the crystal structure of VBO4?
The reference structure of VBO4 is tetragonal symmetry, space group I-4 (No. 82).
What is the density of VBO4?
The computed density of the ground-state structure of VBO4 is 2.47 g/cm³.
How many polymorphs of VBO4 are known?
12 structures of VBO4 are reported across 3 databases, spanning 2 distinct space groups.
What elements does VBO4 contain?
VBO4 contains B, O, and V (3 elements).
Where does the data for VBO4 come from?
VBO4 data is cross-referenced from materials_project, jarvis, oqmd, mpaloe.
Comparison

How It Compares

As a distinct semiconducting borate, VBO4 occupies a unique position in materials science research. While many borates are known for their insulating properties, the inclusion of vanadium provides the electronic flexibility necessary for semiconducting behavior, setting it apart from more traditional, purely dielectric borate frameworks.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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