V2Bi4O11
V2Bi4O11 is a semiconducting bismuth vanadate oxide that is considered a promising candidate for experimental synthesis.
About V2Bi4O11
V2Bi4O11 is a complex oxide composed of bismuth, vanadium, and oxygen. As a semiconducting material, it occupies a unique position in solid-state chemistry, offering potential for electronic and optoelectronic applications due to its specific structural arrangement.
This compound is characterized as near-hull stable, suggesting it is a viable candidate for experimental synthesis. With a notable presence in materials databases across multiple reported structures, it represents a significant, albeit specialized, entry in the landscape of ternary metal oxides.
Key Properties
Cross-validated computational properties for V2Bi4O11, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for V2Bi4O11, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21 (No. 4) | monoclinic | 2.35 | 0.0130 | -7.176 | 7.43 |
| P1 (No. 1) | triclinic | 2.43 | 0.0206 | -7.168 | 7.77 |
| P1 (No. 1) | triclinic | 2.23 | 0.0223 | -7.167 | 7.34 |
| C2 (No. 5) | monoclinic | 2.19 | 0.0339 | -7.155 | 7.71 |
| Cm (No. 8) | monoclinic | 2.49 | 0.0507 | -7.138 | 6.90 |
| Pc (No. 7) | monoclinic | 2.38 | 0.0536 | -7.135 | 7.10 |
| Pc (No. 7) | monoclinic | 2.37 | 0.0732 | -7.116 | 7.24 |
| P21 (No. 4) | monoclinic | 2.76 | 0.0770 | -7.112 | 6.45 |
| P1 (No. 1) | triclinic | 2.53 | 0.1021 | -7.087 | 6.55 |
| P1 (No. 1) | triclinic | 0.61 | 0.7475 | -6.442 | 6.91 |
| P1 (No. 1) | Triclinic | — | — | — | 6.55 |
| P1 (No. 1) | Triclinic | — | — | — | 7.50 |
Applications
Where V2Bi4O11 is used.
Frequently Asked Questions
Common questions about V2Bi4O11, answered from cross-validated data.
What is V2Bi4O11?
V2Bi4O11 is a semiconducting bismuth vanadate oxide that is considered a promising candidate for experimental synthesis.
What is V2Bi4O11 used for?
What is the band gap of V2Bi4O11?
Is V2Bi4O11 a metal, semiconductor, or insulator?
Is V2Bi4O11 thermodynamically stable?
What is the crystal structure of V2Bi4O11?
What is the density of V2Bi4O11?
How many polymorphs of V2Bi4O11 are known?
What elements does V2Bi4O11 contain?
Where does the data for V2Bi4O11 come from?
How It Compares
As a distinct oxide phase, V2Bi4O11 serves as an important reference point for understanding the structural diversity of the bismuth-vanadium-oxygen system, providing a foundation for exploring complex stoichiometry in semiconducting ceramics.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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