TiW
TiW is a metallic titanium-tungsten alloy frequently used as a diffusion barrier in semiconductor manufacturing.
About TiW
TiW is a metallic binary alloy composed of titanium and tungsten. It is recognized for its robust structural integrity and is considered highly synthesizable due to its position near the thermodynamic hull, making it a reliable candidate for material engineering tasks. Its metallic nature ensures high electrical conductivity, which is critical for its performance in demanding technical environments. The compound is widely utilized in the semiconductor industry, particularly as a diffusion barrier layer that prevents the intermixing of metals in integrated circuits. Its ability to maintain stability under various processing conditions makes it a staple in microelectronics manufacturing.
Key Properties
Cross-validated computational properties for TiW, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of TiW. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Synthesis Routes
Literature-extracted synthesis procedures targeting TiW.
Applications
Where TiW is used.
Patent Landscape
5 patents reference TiW or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 5462638 | Selective etching of TiW for C4 fabrication | — | — |
| 4787958 | Method of chemically etching TiW and/or TiWN | — | — |
| 6855638 | Process to pattern thick TiW metal layers using uniform and selective etching | — | — |
| 8025812 | Selective etch of TiW for capture pad formation | — | — |
| 5290588 | TiW barrier metal process | — | — |
Frequently Asked Questions
Common questions about TiW, answered from cross-validated data.
What is TiW?
TiW is a metallic titanium-tungsten alloy frequently used as a diffusion barrier in semiconductor manufacturing.
What is TiW used for?
What is the band gap of TiW?
Is TiW a metal, semiconductor, or insulator?
Is TiW thermodynamically stable?
How many polymorphs of TiW are known?
How is TiW synthesized?
What elements does TiW contain?
Where does the data for TiW come from?
How It Compares
As a binary alloy, TiW serves as a foundational material in its class, often favored for its specific balance of mechanical hardness and chemical resistance. It acts as a critical interface material, providing superior adhesion and barrier properties that are essential for the reliability of modern electronic devices.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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