Te4O9

Te4O9 is a semiconducting binary oxide of tellurium that is considered a likely candidate for experimental synthesis.

OTe
Crystal structure of Te4O9 (trigonal, R-3 (No. 148))
Ground-state structure · Materials Project
Overview

About Te4O9

Te4O9 is a semiconducting tellurium oxide that represents a complex stoichiometry within the binary Te-O system. Its existence as a near-hull phase suggests it is a viable target for experimental synthesis and characterization efforts.

Given its electronic nature, this compound is of interest for fundamental studies into how tellurium oxidation states influence charge transport. It serves as a valuable data point for researchers mapping the structural landscape of tellurium-rich oxides.

At a glance

Key Properties

Cross-validated computational properties for Te4O9, aggregated across 3 databases.

Band Gap

2.18–2.27 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

5
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Te4O9. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.99 / 1.00
Trust tier: high

Hull Spread

0.002 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Te4O9, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R-3 (No. 148)trigonal2.180.0000-1.053—
R-3 (No. 148)trigonal2.220.0012-5.8455.84
——2.270.0025-1.248—
R-3 (No. 148)trigonal———5.64
R-3 (No. 148)trigonal———5.96
R-3 (No. 148)trigonal———5.98
R-3 (No. 148)trigonal———5.46
Uses

Applications

Where Te4O9 is used.

Fundamental materials researchSemiconductor physics studies
Reference

Frequently Asked Questions

Common questions about Te4O9, answered from cross-validated data.

What is Te4O9?

Te4O9 is a semiconducting binary oxide of tellurium that is considered a likely candidate for experimental synthesis.

More questions
What is Te4O9 used for?
Te4O9 is used in fundamental materials research and semiconductor physics studies.
What is the band gap of Te4O9?
Te4O9 has a DFT-computed band gap of 2.18–2.27 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Te4O9 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 2.27 eV (a semiconductor). Measured gaps are typically larger.
Is Te4O9 thermodynamically stable?
Yes — Te4O9 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Te4O9?
The reference structure of Te4O9 is trigonal symmetry, space group R-3 (No. 148).
How many polymorphs of Te4O9 are known?
5 structures of Te4O9 are reported across 3 databases, spanning 1 distinct space group.
What elements does Te4O9 contain?
Te4O9 contains O and Te (2 elements).
Where does the data for Te4O9 come from?
Te4O9 data is cross-referenced from jarvis, materials_project, oqmd, mpaloe, cod.
Comparison

How It Compares

As a distinct binary oxide, Te4O9 occupies a specific niche in the tellurium-oxygen phase space, providing a unique structural arrangement that differentiates it from simpler, more common tellurium oxides.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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