In8S48Tb24

In8S48Tb24 has a DFT band gap of 1.02–1.33 eV across 3 reported structures in 2 space groups. Cross-validated across 2 computational databases.

InSTb
At a glance

Key Properties

Cross-validated computational properties for In8S48Tb24, aggregated across 2 databases.

Band Gap

1.02–1.33 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

3
2 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about In8S48Tb24, answered from cross-validated data.

What is the band gap of In8S48Tb24?

In8S48Tb24 has a DFT-computed band gap of 1.02–1.33 eV across 3 reported structures.

More questions
Is In8S48Tb24 a metal, semiconductor, or insulator?
With a band gap up to 1.33 eV it is a semiconductor.
Is In8S48Tb24 thermodynamically stable?
Yes — In8S48Tb24 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of In8S48Tb24 are known?
3 structures of In8S48Tb24 are reported across 2 databases, spanning 2 distinct space groups.
What elements does In8S48Tb24 contain?
In8S48Tb24 contains In, S, and Tb (3 elements).
Where does the data for In8S48Tb24 come from?
In8S48Tb24 data is cross-referenced from latticegraph.
Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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