SiP
Silicon monophosphide
Silicon monophosphide is a stable semiconducting material known for its diverse structural configurations and potential utility in electronics.
About Silicon monophosphide
Silicon monophosphide is a robust, thermodynamically stable semiconductor that occupies a unique position in the silicon-phosphorus binary system. Its stability on the convex hull makes it a reliable candidate for fundamental materials research and potential integration into specialized electronic architectures.
With extensive documentation across multiple structural databases, this compound demonstrates significant polymorphic variety. This structural richness provides researchers with a versatile platform for exploring how atomic arrangement influences the electronic properties of phosphorus-based semiconductors.
Key Properties
Cross-validated computational properties for Silicon monophosphide, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of SiP. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for SiP, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmc21 (No. 36) | orthorhombic | 1.74 | 0.0000 | -9.058 | 2.26 |
| — | — | 1.56 | 0.0000 | -0.276 | — |
| Cmc21 (No. 36) | orthorhombic | 1.24 | 0.0000 | -0.149 | — |
| — | — | 0.00 | 0.2023 | -0.074 | — |
| — | — | 0.00 | 0.2024 | -0.073 | — |
| F-43m (No. 216) | cubic | 0.00 | 0.3663 | -8.692 | 2.57 |
| — | — | 0.00 | 0.3824 | 0.107 | — |
| F-43m (No. 216) | cubic | 0.00 | 0.3985 | 0.250 | — |
| — | — | 0.00 | 0.5570 | 0.281 | — |
| — | — | 0.00 | 0.6858 | 0.410 | — |
| — | — | 0.00 | 0.6864 | 0.411 | — |
| — | — | 0.00 | 0.7958 | 0.520 | — |
Applications
Where Silicon monophosphide is used.
Patent Landscape
3 patents reference SiP or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 11932933 | Cooling device and process for cooling double-sided SiP devices during sputtering | — | — |
| 11434561 | Cooling device and process for cooling double-sided SiP devices during sputtering | — | — |
| 12385128 | Cooling device and process for cooling double-sided SiP devices during sputtering | — | — |
Frequently Asked Questions
Common questions about Silicon monophosphide, answered from cross-validated data.
What is SiP?
Silicon monophosphide is a stable semiconducting material known for its diverse structural configurations and potential utility in electronics.
What is SiP used for?
What is the band gap of SiP?
Is SiP a metal, semiconductor, or insulator?
Is SiP thermodynamically stable?
What is the crystal structure of SiP?
What is the density of SiP?
How many polymorphs of SiP are known?
What elements does SiP contain?
Where does the data for SiP come from?
How It Compares
As a distinct binary semiconductor, silicon monophosphide serves as a primary reference point for silicon-phosphorus materials, representing a stable phase that bridges the gap between elemental silicon and more complex phosphide systems.
Data sources & attribution
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
Analyze SiP in the Lattice Graph platform
Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 85 source databases.
Explore the Platform →