Si3Bi4O12

Si3Bi4O12 has a DFT band gap of 4.13 eV across 1 reported structure in 1 space group; its reference structure is cubic (I-43d (No. 220)). Cross-validated across 1 computational databases.

BiOSi
At a glance

Key Properties

Cross-validated computational properties for Si3Bi4O12, aggregated across 1 database.

Band Gap

4.13 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
2 DFT sources

Structures

1
1 database, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Si3Bi4O12. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: medium

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

2
jarvis, materials_project

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Si3Bi4O12, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
I-43d (No. 220)cubic4.130.0000-2.157—
I-43d (No. 220)cubic3.890.0000-7.2656.82
I-43d (No. 220)cubic———6.82
I-43d (No. 220)cubic————
I-43d (No. 220)cubic———6.76
I-43d (No. 220)cubic———6.79
I-43d (No. 220)cubic———6.80
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Si3Bi4O12.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about Si3Bi4O12, answered from cross-validated data.

What is the band gap of Si3Bi4O12?

Si3Bi4O12 has a DFT-computed band gap of 4.13 eV. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is Si3Bi4O12 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 4.13 eV (an insulator or wide-band-gap material).
Is Si3Bi4O12 thermodynamically stable?
Yes — Si3Bi4O12 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Si3Bi4O12?
The reference structure of Si3Bi4O12 is cubic symmetry, space group I-43d (No. 220).
How is Si3Bi4O12 synthesized?
Literature-reported routes for Si3Bi4O12 include solid state (10 procedures documented).
What elements does Si3Bi4O12 contain?
Si3Bi4O12 contains Bi, O, and Si (3 elements).
Where does the data for Si3Bi4O12 come from?
Si3Bi4O12 data is cross-referenced from jarvis, materials_project, cod.
Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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