RbIn5S8
Rubidium indium sulfide is a complex ternary chalcogenide material characterized by its layered crystalline structure. It is primarily studied for its potential utility in semiconductor research and optoelectronic device development.
Key Properties
Cross-validated computational properties for RbIn5S8, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for RbIn5S8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 1.26 | 0.0002 | -4.356 | 4.50 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.37 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.55 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.48 |
| C2/m (No. 12) | — | — | — | — | — |
Applications
Where RbIn5S8 is used.
Frequently Asked Questions
Common questions about RbIn5S8, answered from cross-validated data.
What is RbIn5S8?
Rubidium indium sulfide is a complex ternary chalcogenide material characterized by its layered crystalline structure. It is primarily studied for its potential utility in semiconductor research and optoelectronic device development.
What is RbIn5S8 used for?
What is the band gap of RbIn5S8?
Is RbIn5S8 a metal, semiconductor, or insulator?
Is RbIn5S8 thermodynamically stable?
What is the crystal structure of RbIn5S8?
What is the density of RbIn5S8?
How many polymorphs of RbIn5S8 are known?
What elements does RbIn5S8 contain?
Where does the data for RbIn5S8 come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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