O3Y1Zr1

O3Y1Zr1 has a DFT band gap of 0.43–0.56 eV across 6 reported structures in 4 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for O3Y1Zr1, aggregated across 2 databases.

Band Gap

0.43–0.56 eV
Range across DFT structures

Energy Above Hull

0.082 eV/atom
Best (lowest) across sources

Stability

Metastable
1 DFT source

Structures

6
2 databases, 4 space groups
Reference

Frequently Asked Questions

Common questions about O3Y1Zr1, answered from cross-validated data.

What is the band gap of O3Y1Zr1?

O3Y1Zr1 has a DFT-computed band gap of 0.43–0.56 eV across 6 reported structures.

More questions
Is O3Y1Zr1 a metal, semiconductor, or insulator?
With a band gap up to 0.56 eV it is a semiconductor.
Is O3Y1Zr1 thermodynamically stable?
O3Y1Zr1 has a lowest energy above hull of 0.082 eV/atom (metastable).
How many polymorphs of O3Y1Zr1 are known?
6 structures of O3Y1Zr1 are reported across 2 databases, spanning 4 distinct space groups.
What elements does O3Y1Zr1 contain?
O3Y1Zr1 contains O, Y, and Zr (3 elements).
Where does the data for O3Y1Zr1 come from?
O3Y1Zr1 data is cross-referenced from latticegraph.
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Related Compounds

Other Fluorite Oxide-Ion Conductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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