O14Si4Sr2V2
O14Si4Sr2V2 is a semiconducting quaternary oxide that is considered likely to be synthesizable due to its near-hull thermodynamic stability.
About O14Si4Sr2V2
O14Si4Sr2V2 is a complex quaternary oxide composed of strontium, vanadium, silicon, and oxygen. As a semiconducting material, it sits at the intersection of silicate and vanadate chemistry, offering a unique electronic structure that makes it a subject of interest for fundamental materials exploration.
Its status as a near-hull stable compound suggests that it is likely synthesizable under appropriate experimental conditions. With multiple reported structures across databases, it represents a stable, well-defined phase that warrants further investigation for potential functional applications in electronic or catalytic systems.
Key Properties
Cross-validated computational properties for O14Si4Sr2V2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for O14Si4Sr2V2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmcm (No. 63) | orthorhombic | 2.85 | 0.0113 | -8.248 | 3.59 |
| Ama2 (No. 40) | orthorhombic | 2.85 | 0.0117 | -8.248 | 3.59 |
| Cmcm (No. 63) | — | — | — | — | — |
| Cmcm (No. 63) | — | — | — | — | — |
| — | — | — | — | — | 3.59 |
Applications
Where O14Si4Sr2V2 is used.
Frequently Asked Questions
Common questions about O14Si4Sr2V2, answered from cross-validated data.
What is O14Si4Sr2V2?
O14Si4Sr2V2 is a semiconducting quaternary oxide that is considered likely to be synthesizable due to its near-hull thermodynamic stability.
What is O14Si4Sr2V2 used for?
What is the band gap of O14Si4Sr2V2?
Is O14Si4Sr2V2 a metal, semiconductor, or insulator?
Is O14Si4Sr2V2 thermodynamically stable?
What is the crystal structure of O14Si4Sr2V2?
What is the density of O14Si4Sr2V2?
How many polymorphs of O14Si4Sr2V2 are known?
What elements does O14Si4Sr2V2 contain?
Where does the data for O14Si4Sr2V2 come from?
How It Compares
As a unique quaternary oxide, O14Si4Sr2V2 occupies a distinct space in materials chemistry. While it shares structural motifs with common silicates and vanadates, its specific stoichiometry and semiconducting nature provide a specialized electronic profile that differentiates it from simpler binary or ternary oxides.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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