NaMn3F10

NaMn3F10 is a semiconducting sodium manganese fluoride compound that exists in a metastable state.

FMnNa
Crystal structure of NaMn3F10 (orthorhombic, Fdd2 (No. 43))
Ground-state structure · Materials Project
Overview

About NaMn3F10

NaMn3F10 is a complex fluoride compound containing sodium and manganese. As a semiconducting material, it represents a unique arrangement of elements that has been documented across multiple structural databases, reflecting its interest in solid-state chemistry research.

Due to its position above the thermodynamic hull, this compound is considered metastable. Its existence in multiple reported structures suggests that while it may not be the ground-state phase, it remains a subject of investigation for those studying the structural diversity of metal fluorides.

At a glance

Key Properties

Cross-validated computational properties for NaMn3F10, aggregated across 3 databases.

Band Gap

0.08 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.007 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

5
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of NaMn3F10. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.49 / 1.00
Trust tier: low

Hull Spread

0.128 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for NaMn3F10, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Fdd2 (No. 43)orthorhombic1.550.0003-6.2513.34
Fdd2 (No. 43)orthorhombic0.080.0067-2.606—
——0.000.1285-2.668—
Fdd2 (No. 43)orthorhombic———3.13
Fdd2 (No. 43)orthorhombic———3.37
Fdd2 (No. 43)orthorhombic———3.27
Reference

Frequently Asked Questions

Common questions about NaMn3F10, answered from cross-validated data.

What is NaMn3F10?

NaMn3F10 is a semiconducting sodium manganese fluoride compound that exists in a metastable state.

More questions
What is the band gap of NaMn3F10?
NaMn3F10 has a DFT-computed band gap of 0.08 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is NaMn3F10 a metal, semiconductor, or insulator?
DFT predicts a near-zero band gap ((semi)metallic). Standard DFT underestimates gaps, so the real material may be a semiconductor.
Is NaMn3F10 thermodynamically stable?
NaMn3F10 has a lowest energy above hull of 0.007 eV/atom (stable).
What is the crystal structure of NaMn3F10?
The reference structure of NaMn3F10 is orthorhombic symmetry, space group Fdd2 (No. 43).
What is the density of NaMn3F10?
The computed density of the ground-state structure of NaMn3F10 is 3.34 g/cm³.
How many polymorphs of NaMn3F10 are known?
5 structures of NaMn3F10 are reported across 3 databases, spanning 1 distinct space group.
What elements does NaMn3F10 contain?
NaMn3F10 contains F, Mn, and Na (3 elements).
Where does the data for NaMn3F10 come from?
NaMn3F10 data is cross-referenced from materials_project, jarvis, oqmd, mpaloe.
Comparison

How It Compares

As a specialized fluoride, NaMn3F10 occupies a distinct niche in the landscape of manganese-based compounds. Without direct structural siblings in this specific class, it serves as a unique case study for understanding how complex stoichiometry influences the stability and electronic behavior of fluoride-based semiconductors.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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