MgMn3V2O10
MgMn3V2O10 is a metastable, semiconducting quaternary oxide containing magnesium, manganese, and vanadium.
About MgMn3V2O10
MgMn3V2O10 is a complex oxide composed of magnesium, manganese, vanadium, and oxygen. As a semiconducting material, it exhibits specific electronic characteristics that make it a subject of interest for researchers investigating multi-component transition metal oxides. Its metastable nature suggests a unique structural landscape that requires precise synthesis conditions to stabilize its crystalline form.
Given the variety of reported structural configurations for this compound, it represents a versatile platform for exploring structural phase transitions. Its composition, blending multiple transition metals with magnesium, offers a rich playground for studying how cation distribution influences the overall electronic and structural behavior of the material.
Key Properties
Cross-validated computational properties for MgMn3V2O10, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for MgMn3V2O10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P1 (No. 1) | triclinic | 0.87 | 0.0968 | -8.297 | 3.93 |
| P1 (No. 1) | triclinic | 0.86 | 0.1016 | -8.293 | 3.93 |
| P-1 (No. 2) | triclinic | 0.76 | 0.1384 | -8.256 | 3.79 |
| P1 (No. 1) | triclinic | 1.02 | 0.1413 | -8.253 | 3.89 |
| P-1 (No. 2) | Triclinic | — | — | — | 3.79 |
| P1 (No. 1) | Triclinic | — | — | — | 4.28 |
| P1 (No. 1) | Triclinic | — | — | — | 3.89 |
| P1 (No. 1) | Triclinic | — | — | — | 4.04 |
| P1 (No. 1) | Triclinic | — | — | — | 4.33 |
| P1 (No. 1) | Triclinic | — | — | — | 4.09 |
| P-1 (No. 2) | Triclinic | — | — | — | 4.24 |
| P1 (No. 1) | Triclinic | — | — | — | 4.33 |
Applications
Where MgMn3V2O10 is used.
Frequently Asked Questions
Common questions about MgMn3V2O10, answered from cross-validated data.
What is MgMn3V2O10?
MgMn3V2O10 is a metastable, semiconducting quaternary oxide containing magnesium, manganese, and vanadium.
What is MgMn3V2O10 used for?
What is the band gap of MgMn3V2O10?
Is MgMn3V2O10 a metal, semiconductor, or insulator?
Is MgMn3V2O10 thermodynamically stable?
What is the crystal structure of MgMn3V2O10?
What is the density of MgMn3V2O10?
How many polymorphs of MgMn3V2O10 are known?
What elements does MgMn3V2O10 contain?
Where does the data for MgMn3V2O10 come from?
How It Compares
As a unique multi-element oxide, MgMn3V2O10 occupies a specialized niche within the landscape of complex transition metal oxides. Unlike simpler binary or ternary oxides, its quaternary composition allows for a broader range of structural complexity, positioning it as a distinct candidate for studies focused on the interplay between magnetic and semiconducting properties in metastable systems.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
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