LaN

lanthanum nitride · lanthanum mononitride

Lanthanum nitride is a stable, semiconducting binary compound formed from lanthanum and nitrogen.

LaN
Crystal structure of LaN (cubic, Fm-3m (No. 225))
Ground-state structure · Materials Project
Overview

About lanthanum nitride

Lanthanum nitride is a binary compound consisting of lanthanum and nitrogen. As a thermodynamically stable material situated on the convex hull, it represents a robust phase within its chemical system, supported by extensive structural data across multiple research databases. Its semiconducting electronic character makes it an intriguing candidate for specialized solid-state applications. The material is primarily studied for its physical properties and its role in the broader landscape of rare-earth nitrides. Its stability ensures it remains a point of interest for researchers investigating the intersection of lanthanide chemistry and semiconductor physics.

At a glance

Key Properties

Cross-validated computational properties for lanthanum nitride, aggregated across 7 databases.

Band Gap

0.71–1.67 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
4 DFT sources

Structures

72
7 databases, 17 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of LaN. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

Mixed (most: Fm-3m (No. 225))
Crystallography

Reported Structures

Lowest-energy structures reported for LaN, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——1.170.0000-1.426—
Cm (No. 8)monoclinic0.710.0000-1.573—
Fm-3m (No. 225)cubic0.000.0000-21.0126.82
——0.000.0121-1.414—
——0.000.0134-1.413—
P63mc (No. 186)hexagonal1.120.0164-20.9965.79
Fm-3m (No. 225)cubic0.000.0408-1.532—
——1.310.0555-1.371—
P63mc (No. 186)hexagonal1.470.0913-1.481—
P4/nmm (No. 129)tetragonal1.670.1167-20.8956.80
——1.640.1197-1.307—
P4/nmm (No. 129)tetragonal1.430.1748-1.398—
Uses

Applications

Where lanthanum nitride is used.

semiconductor researchmaterials science studiesrare-earth nitride investigation
Reference

Frequently Asked Questions

Common questions about lanthanum nitride, answered from cross-validated data.

What is LaN?

Lanthanum nitride is a stable, semiconducting binary compound formed from lanthanum and nitrogen.

More questions
What is LaN used for?
lanthanum nitride (LaN) is used in semiconductor research, materials science studies, and rare-earth nitride investigation.
What is the band gap of LaN?
lanthanum nitride (LaN) has a DFT-computed band gap of 0.71–1.67 eV across 72 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is LaN a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.67 eV (a semiconductor). Measured gaps are typically larger.
Is LaN thermodynamically stable?
Yes — lanthanum nitride (LaN) sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of LaN?
The reference structure of lanthanum nitride (LaN) is cubic symmetry, space group Fm-3m (No. 225).
What is the density of LaN?
The computed density of the ground-state structure of lanthanum nitride (LaN) is 6.82 g/cm³.
How many polymorphs of LaN are known?
72 structures of LaN are reported across 7 databases, spanning 17 distinct space groups.
What elements does LaN contain?
lanthanum nitride (LaN) contains La and N (2 elements).
Where does the data for LaN come from?
LaN data is cross-referenced from oqmd, jarvis, materials_project, mpaloe.
Comparison

How It Compares

As a stable binary nitride, lanthanum nitride serves as a fundamental reference point for understanding the structural and electronic behavior of rare-earth pnictides. It occupies a distinct role in this class by providing a well-defined, stable platform for exploring how lanthanide cations influence the semiconducting properties of nitride-based materials.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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