InSe

indium selenide · indium monoselenide

Indium selenide is a stable semiconducting material composed of indium and selenium that is widely studied for its potential in electronic and optoelectronic applications.

InSe
Crystal structure of InSe (trigonal, R3m (No. 160))
Ground-state structure · Materials Project
Overview

About indium selenide

Indium selenide is a thermodynamically stable binary compound that has garnered significant attention due to its distinct semiconducting properties. Its layered crystal architecture allows for unique electronic behavior, making it a subject of extensive research across numerous structural databases. The material is highly regarded for its potential in next-generation electronic and optoelectronic devices. Its stability and characteristic electronic response make it a foundational candidate for exploring low-dimensional physics and high-performance material applications.

At a glance

Key Properties

Cross-validated computational properties for indium selenide, aggregated across 5 databases.

Band Gap

0.16–1.05 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

105
5 databases, 23 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of InSe. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

Mixed (most: R3m (No. 160))
Crystallography

Reported Structures

Lowest-energy structures reported for InSe, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——0.550.0000-0.527—
P63/mmc (No. 194)hexagonal0.460.0000-19.1225.22
R3m (No. 160)trigonal0.170.0000-0.506—
P-6m2 (No. 187)hexagonal0.160.0003-0.506—
R3m (No. 160)trigonal0.540.0004-19.1215.27
P63/mmc (No. 194)hexagonal0.230.0016-0.505—
P-6m2 (No. 187)hexagonal0.660.0018-19.1205.03
——0.710.0031-0.524—
C2/m (No. 12)monoclinic0.880.0114-0.495—
C2/m (No. 12)monoclinic1.050.0367-19.0855.63
——0.730.0408-0.486—
——0.170.0746-0.452—
Uses

Applications

Where indium selenide is used.

PhotodetectorsThin-film transistorsOptoelectronic devicesSolar cells
Reference

Frequently Asked Questions

Common questions about indium selenide, answered from cross-validated data.

What is InSe?

Indium selenide is a stable semiconducting material composed of indium and selenium that is widely studied for its potential in electronic and optoelectronic applications.

More questions
What is InSe used for?
indium selenide (InSe) is used in photodetectors, thin-film transistors, optoelectronic devices, and solar cells.
What is the band gap of InSe?
indium selenide (InSe) has a DFT-computed band gap of 0.16–1.05 eV across 105 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is InSe a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.05 eV (a semiconductor). Measured gaps are typically larger.
Is InSe thermodynamically stable?
Yes — indium selenide (InSe) sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of InSe?
The reference structure of indium selenide (InSe) is trigonal symmetry, space group R3m (No. 160).
How many polymorphs of InSe are known?
105 structures of InSe are reported across 5 databases, spanning 23 distinct space groups.
What elements does InSe contain?
indium selenide (InSe) contains In and Se (2 elements).
Where does the data for InSe come from?
InSe data is cross-referenced from oqmd, materials_project, jarvis, mpaloe.
Comparison

How It Compares

As a prominent member of the indium-chalcogenide family, indium selenide stands out for its robust thermodynamic stability and well-documented structural diversity, serving as a primary benchmark for studying the electronic properties of layered semiconductors.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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