In3AsSe3

In3AsSe3 is a semiconducting indium arsenic selenide compound that is considered thermodynamically stable and a candidate for experimental synthesis.

AsInSe
Crystal structure of In3AsSe3 (monoclinic, Cm (No. 8))
Ground-state structure · Materials Project
Overview

About In3AsSe3

In3AsSe3 is a ternary semiconducting compound composed of indium, arsenic, and selenium. Its electronic properties and structural configuration make it a subject of interest for researchers investigating complex chalcogenide systems for potential optoelectronic applications.

As a near-hull material, it is considered thermodynamically stable and likely synthesizable under controlled laboratory conditions. The existence of multiple reported structures across various databases underscores its significance as a versatile candidate in materials discovery.

At a glance

Key Properties

Cross-validated computational properties for In3AsSe3, aggregated across 3 databases.

Band Gap

0.02 eV
Range across DFT structures · ground state: metal

Energy Above Hull

0.025 eV/atom
Best (lowest) across sources

Stability

Near Hull
3 DFT sources

Structures

8
3 databases, 2 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of In3AsSe3. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.12 / 1.00
Trust tier: low

Hull Spread

0.221 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

Mixed (most: Cm (No. 8))
Crystallography

Reported Structures

Lowest-energy structures reported for In3AsSe3, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cm (No. 8)monoclinic0.000.0137-18.4994.94
Pmn21 (No. 31)orthorhombic0.100.0194-18.4934.90
Pmn21 (No. 31)orthorhombic0.020.0250-0.411—
——0.000.2348-0.217—
Cm (No. 8)monoclinic———5.20
Pmn21 (No. 31)orthorhombic———5.15
Cm (No. 8)monoclinic———5.11
Pmn21 (No. 31)orthorhombic———4.90
Pmn21 (No. 31)orthorhombic———5.07
Cm (No. 8)monoclinic———4.94
Uses

Applications

Where In3AsSe3 is used.

Semiconductor researchMaterials science explorationOptoelectronic device development
Reference

Frequently Asked Questions

Common questions about In3AsSe3, answered from cross-validated data.

What is In3AsSe3?

In3AsSe3 is a semiconducting indium arsenic selenide compound that is considered thermodynamically stable and a candidate for experimental synthesis.

More questions
What is In3AsSe3 used for?
In3AsSe3 is used in semiconductor research, materials science exploration, and optoelectronic device development.
What is the band gap of In3AsSe3?
In3AsSe3 has a DFT-computed band gap of 0.02 eV across 8 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is In3AsSe3 a metal, semiconductor, or insulator?
DFT predicts a near-zero band gap ((semi)metallic). Standard DFT underestimates gaps, so the real material may be a semiconductor.
Is In3AsSe3 thermodynamically stable?
In3AsSe3 has a lowest energy above hull of 0.025 eV/atom (near hull).
What is the crystal structure of In3AsSe3?
The reference structure of In3AsSe3 is monoclinic symmetry, space group Cm (No. 8).
What is the density of In3AsSe3?
The computed density of the ground-state structure of In3AsSe3 is 4.94 g/cm³.
How many polymorphs of In3AsSe3 are known?
8 structures of In3AsSe3 are reported across 3 databases, spanning 2 distinct space groups.
What elements does In3AsSe3 contain?
In3AsSe3 contains As, In, and Se (3 elements).
Where does the data for In3AsSe3 come from?
In3AsSe3 data is cross-referenced from materials_project, jarvis, oqmd, mpaloe.
Comparison

How It Compares

As a unique ternary phase, In3AsSe3 occupies a distinct position in the landscape of indium-based chalcogenides, serving as a representative example of how complex stoichiometry influences semiconducting behavior in the absence of more common binary or quaternary analogs.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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