In32Se32Sn8

In32Se32Sn8 is a semiconducting ternary compound containing indium, selenium, and tin that is considered a viable candidate for synthesis.

InSeSn
Crystal structure of In32Se32Sn8 (cubic, Pa-3 (No. 205))
Ground-state structure · Materials Project
Overview

About In32Se32Sn8

In32Se32Sn8 is a complex ternary semiconductor composed of indium, selenium, and tin. Its electronic character suggests it may be well-suited for specialized electronic or optoelectronic device architectures where specific band structures are required for performance. The material is recognized as being near the thermodynamic hull, indicating that it is likely synthesizable under controlled laboratory conditions. Its presence across multiple structural databases highlights its significance as a subject of ongoing computational and experimental materials research. As a complex chalcogenide, it represents a unique intersection of group elements that are frequently explored for their tunable semiconducting properties. The stability profile of this compound makes it a promising candidate for further investigation into thin-film technologies or high-performance electronic components.

At a glance

Key Properties

Cross-validated computational properties for In32Se32Sn8, aggregated across 3 databases.

Band Gap

0.80 eV
Range across DFT structures

Energy Above Hull

0.002 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

4
3 databases, 1 space group
Crystallography

Reported Structures

Lowest-energy structures reported for In32Se32Sn8, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pa-3 (No. 205)cubic0.800.0019-19.7455.39
Pa-3 (No. 205)
Pa-3 (No. 205)
5.36
Uses

Applications

Where In32Se32Sn8 is used.

Semiconductor researchOptoelectronic device developmentThin-film material studies
Reference

Frequently Asked Questions

Common questions about In32Se32Sn8, answered from cross-validated data.

What is In32Se32Sn8?

In32Se32Sn8 is a semiconducting ternary compound containing indium, selenium, and tin that is considered a viable candidate for synthesis.

More questions
What is In32Se32Sn8 used for?
In32Se32Sn8 is used in semiconductor research, optoelectronic device development, and thin-film material studies.
What is the band gap of In32Se32Sn8?
In32Se32Sn8 has a DFT-computed band gap of 0.80 eV across 4 reported structures.
Is In32Se32Sn8 a metal, semiconductor, or insulator?
With a band gap up to 0.80 eV it is a semiconductor.
Is In32Se32Sn8 thermodynamically stable?
In32Se32Sn8 has a lowest energy above hull of 0.002 eV/atom (near hull (likely stable)).
What is the crystal structure of In32Se32Sn8?
The lowest-energy reported polymorph of In32Se32Sn8 is cubic symmetry, space group Pa-3 (No. 205).
What is the density of In32Se32Sn8?
The computed density of the ground-state structure of In32Se32Sn8 is 5.39 g/cm³.
How many polymorphs of In32Se32Sn8 are known?
4 structures of In32Se32Sn8 are reported across 3 databases, spanning 1 distinct space group.
What elements does In32Se32Sn8 contain?
In32Se32Sn8 contains In, Se, and Sn (3 elements).
Where does the data for In32Se32Sn8 come from?
In32Se32Sn8 data is cross-referenced from materials_project, aflow, omat24.
Comparison

How It Compares

As a ternary indium-tin-selenide, this compound serves as a distinct representative of complex chalcogenide systems. Unlike simpler binary semiconductors, this material leverages the interplay between its three constituent elements to potentially offer unique electronic characteristics that are not easily achieved in more basic material configurations.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

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