In2Ni2O12Sr6

In2Ni2O12Sr6 is a thermodynamically stable, semiconducting quaternary oxide composed of indium, nickel, strontium, and oxygen.

InNiOSr
Crystal structure of In2Ni2O12Sr6 (monoclinic, P21/c (No. 14))
Ground-state structure · Materials Project
Overview

About In2Ni2O12Sr6

In2Ni2O12Sr6 is a complex oxide featuring indium, nickel, strontium, and oxygen. As a thermodynamically stable material residing on the convex hull, it represents a robust structural arrangement that is of significant interest for materials research. Its electronic character is defined as semiconducting, making it a candidate for specialized electronic and optoelectronic environments. The existence of multiple reported structures across databases underscores its structural versatility and the ongoing scientific interest in its crystalline configuration. This compound serves as a critical example of how multi-element oxide systems can be tuned for specific electronic behaviors. Its stability suggests potential for integration into devices where material longevity and consistent electronic performance are required.

At a glance

Key Properties

Cross-validated computational properties for In2Ni2O12Sr6, aggregated across 3 databases.

Band Gap

0.69–1.35 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

5
3 databases, 3 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for In2Ni2O12Sr6, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P21/c (No. 14)monoclinic0.690.0000-6.3495.92
C2/c (No. 15)monoclinic1.350.0033-6.3465.71
R-3c (No. 167)trigonal0.000.0082-6.3415.71
5.78
R-3c (No. 167)
Uses

Applications

Where In2Ni2O12Sr6 is used.

Semiconductor researchSolid-state electronic materialsAdvanced oxide ceramics
Reference

Frequently Asked Questions

Common questions about In2Ni2O12Sr6, answered from cross-validated data.

What is In2Ni2O12Sr6?

In2Ni2O12Sr6 is a thermodynamically stable, semiconducting quaternary oxide composed of indium, nickel, strontium, and oxygen.

More questions
What is In2Ni2O12Sr6 used for?
In2Ni2O12Sr6 is used in semiconductor research, solid-state electronic materials, and advanced oxide ceramics.
What is the band gap of In2Ni2O12Sr6?
In2Ni2O12Sr6 has a DFT-computed band gap of 0.69–1.35 eV across 5 reported structures.
Is In2Ni2O12Sr6 a metal, semiconductor, or insulator?
With a band gap up to 1.35 eV it is a semiconductor.
Is In2Ni2O12Sr6 thermodynamically stable?
Yes — In2Ni2O12Sr6 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of In2Ni2O12Sr6?
The lowest-energy reported polymorph of In2Ni2O12Sr6 is monoclinic symmetry, space group P21/c (No. 14).
What is the density of In2Ni2O12Sr6?
The computed density of the ground-state structure of In2Ni2O12Sr6 is 5.92 g/cm³.
How many polymorphs of In2Ni2O12Sr6 are known?
5 structures of In2Ni2O12Sr6 are reported across 3 databases, spanning 3 distinct space groups.
What elements does In2Ni2O12Sr6 contain?
In2Ni2O12Sr6 contains In, Ni, O, and Sr (4 elements).
Where does the data for In2Ni2O12Sr6 come from?
In2Ni2O12Sr6 data is cross-referenced from materials_project, omat24, aflow.
Comparison

How It Compares

As a unique complex oxide, In2Ni2O12Sr6 occupies a specialized niche within the broader landscape of quaternary metal oxides. While many similar oxides are explored for catalytic or dielectric properties, this compound is distinguished by its specific stoichiometry and its position as a stable phase, providing a reliable baseline for studying the interplay between its constituent elements in a semiconducting framework.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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