Ho4MgS7

Ho4MgS7 is a semiconducting ternary sulfide containing holmium, magnesium, and sulfur that is considered likely to be synthesizable.

HoMgS
Crystal structure of Ho4MgS7 (monoclinic, Cm (No. 8))
Ground-state structure · Materials Project
Overview

About Ho4MgS7

Ho4MgS7 is a complex ternary sulfide incorporating holmium and magnesium. As a semiconducting material, it exhibits electronic properties that distinguish it from simple binary sulfides, making it a candidate for specialized solid-state applications.

Its status as a near-hull compound suggests that it is thermodynamically accessible for synthesis. The existence of multiple reported structures indicates that this material is a recognized entity in materials databases, warranting further investigation into its structural and electronic behavior.

At a glance

Key Properties

Cross-validated computational properties for Ho4MgS7, aggregated across 3 databases.

Band Gap

1.01–1.07 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.021 eV/atom
Best (lowest) across sources

Stability

Near Hull
2 DFT sources

Structures

5
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ho4MgS7. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.99 / 1.00
Trust tier: medium

Hull Spread

0.003 eV
EAH spread across sources

Sources Compared

2
jarvis, materials_project

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ho4MgS7, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cm (No. 8)monoclinic1.070.0206-6.3095.71
Cm (No. 8)monoclinic1.010.0232-2.126—
Cm (No. 8)monoclinic———5.86
Cm (No. 8)monoclinic———5.71
Cm (No. 8)monoclinic———5.81
Uses

Applications

Where Ho4MgS7 is used.

Solid-state researchInorganic materials development
Reference

Frequently Asked Questions

Common questions about Ho4MgS7, answered from cross-validated data.

What is Ho4MgS7?

Ho4MgS7 is a semiconducting ternary sulfide containing holmium, magnesium, and sulfur that is considered likely to be synthesizable.

More questions
What is Ho4MgS7 used for?
Ho4MgS7 is used in solid-state research and inorganic materials development.
What is the band gap of Ho4MgS7?
Ho4MgS7 has a DFT-computed band gap of 1.01–1.07 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ho4MgS7 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.07 eV (a semiconductor). Measured gaps are typically larger.
Is Ho4MgS7 thermodynamically stable?
Ho4MgS7 has a lowest energy above hull of 0.021 eV/atom (near hull).
What is the crystal structure of Ho4MgS7?
The reference structure of Ho4MgS7 is monoclinic symmetry, space group Cm (No. 8).
What is the density of Ho4MgS7?
The computed density of the ground-state structure of Ho4MgS7 is 5.71 g/cm³.
How many polymorphs of Ho4MgS7 are known?
5 structures of Ho4MgS7 are reported across 3 databases, spanning 1 distinct space group.
What elements does Ho4MgS7 contain?
Ho4MgS7 contains Ho, Mg, and S (3 elements).
Where does the data for Ho4MgS7 come from?
Ho4MgS7 data is cross-referenced from materials_project, jarvis, mpaloe.
Comparison

How It Compares

As a unique ternary sulfide, Ho4MgS7 represents a specialized niche in inorganic chemistry. Without direct structural siblings in this specific class, it serves as a distinct example of how rare-earth and alkaline-earth elements can be combined with sulfur to create stable, semiconducting architectures.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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