HfTiO4

HfTiO4 is a metastable semiconducting oxide containing hafnium and titanium used in research for electronic and dielectric applications.

HfOTi
Crystal structure of HfTiO4
Ground-state structure · Materials Project
Overview

About HfTiO4

HfTiO4 is a ternary oxide composed of hafnium, titanium, and oxygen. As a semiconducting material, it represents an interesting subject for research into dielectric and electronic thin-film technologies where precise control over stoichiometry and phase stability is required. Because it exists in a metastable state, its synthesis often requires careful processing to stabilize the desired crystalline form. The existence of multiple reported structures highlights its structural flexibility and the ongoing interest in characterizing its behavior for potential integration into next-generation devices.

At a glance

Key Properties

Cross-validated computational properties for HfTiO4, aggregated across 3 databases.

Band Gap

2.60–2.87 eV
Range across DFT structures

Energy Above Hull

0.038 eV/atom
Best (lowest) across sources

Stability

Metastable
2 DFT sources

Structures

10
3 databases, 6 space groups
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting HfTiO4.

Sol Gel
Procedure available · ceder_sol_gel
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Uses

Applications

Where HfTiO4 is used.

Dielectric thin-film researchSemiconductor device developmentAdvanced materials characterization
Reference

Frequently Asked Questions

Common questions about HfTiO4, answered from cross-validated data.

What is HfTiO4?

HfTiO4 is a metastable semiconducting oxide containing hafnium and titanium used in research for electronic and dielectric applications.

More questions
What is HfTiO4 used for?
HfTiO4 is used in dielectric thin-film research, semiconductor device development, and advanced materials characterization.
What is the band gap of HfTiO4?
HfTiO4 has a DFT-computed band gap of 2.60–2.87 eV across 10 reported structures.
Is HfTiO4 a metal, semiconductor, or insulator?
With a band gap up to 2.87 eV it is a semiconductor.
Is HfTiO4 thermodynamically stable?
HfTiO4 has a lowest energy above hull of 0.038 eV/atom (metastable).
How many polymorphs of HfTiO4 are known?
10 structures of HfTiO4 are reported across 3 databases, spanning 6 distinct space groups.
How is HfTiO4 synthesized?
Literature-reported routes for HfTiO4 include sol gel, solid state (3 procedures documented).
What elements does HfTiO4 contain?
HfTiO4 contains Hf, O, and Ti (3 elements).
Where does the data for HfTiO4 come from?
HfTiO4 data is cross-referenced from latticegraph.
Comparison

How It Compares

As a unique ternary oxide, HfTiO4 occupies a specialized niche in materials science, acting as a bridge between the well-established binary oxides of hafnium and titanium. Unlike more common binary systems, this compound offers a distinct structural profile that allows researchers to tune electronic properties by balancing the chemical contributions of its constituent transition metals.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze HfTiO4 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →