HfSe2

Hafnium diselenide · Hafnium selenide

Hafnium diselenide is a stable, layered semiconducting material widely studied for its role in future electronic and optoelectronic technologies.

HfSe
Crystal structure of HfSe2 (trigonal, P-3m1 (No. 164))
Ground-state structure · Materials Project
Overview

About Hafnium diselenide

Hafnium diselenide is a layered transition metal dichalcogenide characterized by its semiconducting electronic structure. As a thermodynamically stable material residing on the convex hull, it offers a robust platform for investigating low-dimensional physics and potential integration into next-generation electronic devices.

Its structural versatility is highlighted by its extensive presence across multiple materials databases, reflecting significant interest from the scientific community. This compound serves as a critical subject for exploring thin-film technologies and semiconductor applications where stability and tunable electronic properties are essential.

At a glance

Key Properties

Cross-validated computational properties for Hafnium diselenide, aggregated across 4 databases.

Band Gap

0.27–1.76 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

147
4 databases, 28 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of HfSe2. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.001 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for HfSe2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P-3m1 (No. 164)trigonal0.550.0000-26.1567.09
P-3m1 (No. 164)trigonal0.470.0000-1.393—
——0.420.0006-1.347—
——0.590.0009-1.346—
P-3m1 (No. 164)trigonal0.530.0104-1.383—
——0.810.1480-1.199—
——0.960.1685-1.179—
——0.270.1719-1.175—
——0.270.1719-1.175—
——0.000.1723-1.175—
——0.340.1727-1.175—
——0.280.3209-1.026—
Uses

Applications

Where Hafnium diselenide is used.

Field-effect transistorsOptoelectronicsPhotodetectorsNanoscale electronic devices
Reference

Frequently Asked Questions

Common questions about Hafnium diselenide, answered from cross-validated data.

What is HfSe2?

Hafnium diselenide is a stable, layered semiconducting material widely studied for its role in future electronic and optoelectronic technologies.

More questions
What is HfSe2 used for?
Hafnium diselenide (HfSe2) is used in field-effect transistors, optoelectronics, photodetectors, and nanoscale electronic devices.
What is the band gap of HfSe2?
Hafnium diselenide (HfSe2) has a DFT-computed band gap of 0.27–1.76 eV across 147 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is HfSe2 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.76 eV (a semiconductor). Measured gaps are typically larger.
Is HfSe2 thermodynamically stable?
Yes — Hafnium diselenide (HfSe2) sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of HfSe2?
The reference structure of Hafnium diselenide (HfSe2) is trigonal symmetry, space group P-3m1 (No. 164).
What is the density of HfSe2?
The computed density of the ground-state structure of Hafnium diselenide (HfSe2) is 7.09 g/cm³.
How many polymorphs of HfSe2 are known?
147 structures of HfSe2 are reported across 4 databases, spanning 28 distinct space groups.
What elements does HfSe2 contain?
Hafnium diselenide (HfSe2) contains Hf and Se (2 elements).
Where does the data for HfSe2 come from?
HfSe2 data is cross-referenced from materials_project, jarvis, oqmd, mpaloe.
Comparison

How It Compares

As a prominent member of the transition metal dichalcogenide family, hafnium diselenide is recognized for its structural integrity and reliable semiconducting behavior, positioning it as a foundational material for researchers exploring the next generation of high-performance electronic components.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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