HfBr4
Hafnium tetrabromide · Hafnium(IV) bromide
Hafnium tetrabromide is a volatile inorganic compound that serves as a key precursor in chemical vapor deposition processes. It is primarily utilized for the thin-film deposition of hafnium-based materials in advanced semiconductor manufacturing.
Key Properties
Cross-validated computational properties for Hafnium tetrabromide, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for HfBr4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pa-3 (No. 205) | cubic | 4.29 | 0.0000 | -5.116 | 4.08 |
| P-1 (No. 2) | Triclinic | — | — | — | 8.76 |
| I4/m (No. 87) | Tetragonal | — | — | — | 7.06 |
| P-1 (No. 2) | Triclinic | — | — | — | 4.53 |
| P1 (No. 1) | Triclinic | — | — | — | 11.33 |
| I4/mmm (No. 139) | Tetragonal | — | — | — | 5.29 |
| Cm (No. 8) | Monoclinic | — | — | — | 7.09 |
| C2/m (No. 12) | Monoclinic | — | — | — | 10.27 |
| C2/m (No. 12) | Monoclinic | — | — | — | 5.78 |
| C2/m (No. 12) | Monoclinic | — | — | — | 3.96 |
| P1 (No. 1) | Triclinic | — | — | — | 10.26 |
| P2/m (No. 10) | Monoclinic | — | — | — | 6.05 |
Applications
Where Hafnium tetrabromide is used.
Frequently Asked Questions
Common questions about Hafnium tetrabromide, answered from cross-validated data.
What is HfBr4?
Hafnium tetrabromide is a volatile inorganic compound that serves as a key precursor in chemical vapor deposition processes. It is primarily utilized for the thin-film deposition of hafnium-based materials in advanced semiconductor manufacturing.
What is HfBr4 used for?
What is the band gap of HfBr4?
Is HfBr4 a metal, semiconductor, or insulator?
Is HfBr4 thermodynamically stable?
What is the crystal structure of HfBr4?
What is the density of HfBr4?
How many polymorphs of HfBr4 are known?
What elements does HfBr4 contain?
Where does the data for HfBr4 come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
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