Hf8O40Y16

Hf8O40Y16 has a DFT band gap of 4.05–4.56 eV across 6 reported structures in 4 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Hf8O40Y16, aggregated across 2 databases.

Band Gap

4.05–4.56 eV
Range across DFT structures

Energy Above Hull

0.001 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

6
2 databases, 4 space groups
Reference

Frequently Asked Questions

Common questions about Hf8O40Y16, answered from cross-validated data.

What is the band gap of Hf8O40Y16?

Hf8O40Y16 has a DFT-computed band gap of 4.05–4.56 eV across 6 reported structures.

More questions
Is Hf8O40Y16 a metal, semiconductor, or insulator?
With a wide band gap up to 4.56 eV it is an insulator / wide-band-gap material.
Is Hf8O40Y16 thermodynamically stable?
Hf8O40Y16 has a lowest energy above hull of 0.001 eV/atom (near hull (likely stable)).
How many polymorphs of Hf8O40Y16 are known?
6 structures of Hf8O40Y16 are reported across 2 databases, spanning 4 distinct space groups.
What elements does Hf8O40Y16 contain?
Hf8O40Y16 contains Hf, O, and Y (3 elements).
Where does the data for Hf8O40Y16 come from?
Hf8O40Y16 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Fluorite Oxide-Ion Conductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze Hf8O40Y16 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →