Hf3O12Sc4

Hf3O12Sc4 has a DFT band gap of 3.91–4.20 eV across 4 reported structures in 2 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Hf3O12Sc4, aggregated across 2 databases.

Band Gap

3.91–4.20 eV
Range across DFT structures

Energy Above Hull

0.016 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

4
2 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about Hf3O12Sc4, answered from cross-validated data.

What is the band gap of Hf3O12Sc4?

Hf3O12Sc4 has a DFT-computed band gap of 3.91–4.20 eV across 4 reported structures.

More questions
Is Hf3O12Sc4 a metal, semiconductor, or insulator?
With a wide band gap up to 4.20 eV it is an insulator / wide-band-gap material.
Is Hf3O12Sc4 thermodynamically stable?
Hf3O12Sc4 has a lowest energy above hull of 0.016 eV/atom (near hull (likely stable)).
How many polymorphs of Hf3O12Sc4 are known?
4 structures of Hf3O12Sc4 are reported across 2 databases, spanning 2 distinct space groups.
What elements does Hf3O12Sc4 contain?
Hf3O12Sc4 contains Hf, O, and Sc (3 elements).
Where does the data for Hf3O12Sc4 come from?
Hf3O12Sc4 data is cross-referenced from latticegraph.
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Related Compounds

Other Fluorite Oxide-Ion Conductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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