Hf2O8Zr2

Hf2O8Zr2 is a metastable, insulating oxide compound containing hafnium and zirconium that is studied for its potential applications in electronic materials.

HfOZr
Crystal structure of Hf2O8Zr2 (monoclinic, P21/c (No. 14))
Ground-state structure · Materials Project
Overview

About Hf2O8Zr2

Hf2O8Zr2 is a complex oxide composed of hafnium, zirconium, and oxygen. As a wide-gap insulator, it exhibits electronic characteristics typical of high-performance dielectric materials, making it a subject of interest for researchers investigating advanced thin-film components.

Although it is considered a metastable phase, the compound has been identified across multiple structural databases. Its existence highlights the intricate phase landscape of hafnium-zirconium-based oxides, which are critical for developing next-generation microelectronic devices.

At a glance

Key Properties

Cross-validated computational properties for Hf2O8Zr2, aggregated across 3 databases.

Band Gap

3.29–4.07 eV
Range across DFT structures

Energy Above Hull

0.039 eV/atom
Best (lowest) across sources

Stability

Metastable
2 DFT sources

Structures

12
3 databases, 7 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Hf2O8Zr2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P21/c (No. 14)monoclinic3.560.0390-10.2617.10
Cmmm (No. 65)orthorhombic3.440.0396-10.2607.10
I41/a (No. 88)tetragonal4.070.0484-10.2518.12
Cm (No. 8)monoclinic3.950.0570-10.2428.17
P213 (No. 198)cubic3.290.0803-10.2198.28
I41/amd (No. 141)
I41/a (No. 88)
P2/c (No. 13)
I41/a (No. 88)
P2/c (No. 13)
6.12
I41/amd (No. 141)
Uses

Applications

Where Hf2O8Zr2 is used.

Dielectric researchThin-film electronic componentsMaterials science studies
Reference

Frequently Asked Questions

Common questions about Hf2O8Zr2, answered from cross-validated data.

What is Hf2O8Zr2?

Hf2O8Zr2 is a metastable, insulating oxide compound containing hafnium and zirconium that is studied for its potential applications in electronic materials.

More questions
What is Hf2O8Zr2 used for?
Hf2O8Zr2 is used in dielectric research, thin-film electronic components, and materials science studies.
What is the band gap of Hf2O8Zr2?
Hf2O8Zr2 has a DFT-computed band gap of 3.29–4.07 eV across 12 reported structures.
Is Hf2O8Zr2 a metal, semiconductor, or insulator?
With a wide band gap up to 4.07 eV it is an insulator / wide-band-gap material.
Is Hf2O8Zr2 thermodynamically stable?
Hf2O8Zr2 has a lowest energy above hull of 0.039 eV/atom (metastable).
What is the crystal structure of Hf2O8Zr2?
The lowest-energy reported polymorph of Hf2O8Zr2 is monoclinic symmetry, space group P21/c (No. 14).
What is the density of Hf2O8Zr2?
The computed density of the ground-state structure of Hf2O8Zr2 is 7.10 g/cm³.
How many polymorphs of Hf2O8Zr2 are known?
12 structures of Hf2O8Zr2 are reported across 3 databases, spanning 7 distinct space groups.
What elements does Hf2O8Zr2 contain?
Hf2O8Zr2 contains Hf, O, and Zr (3 elements).
Where does the data for Hf2O8Zr2 come from?
Hf2O8Zr2 data is cross-referenced from materials_project, aflow, omat24.
Comparison

How It Compares

As a unique oxide phase, Hf2O8Zr2 represents a specialized configuration within the broader family of hafnium-zirconium binary and ternary systems, serving as a distinct structural variant that contributes to the fundamental understanding of metal-oxide stability.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

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