H34N10S6Si2

This complex silicon-nitrogen-sulfur compound is a specialized chemical species typically utilized in advanced materials research. It serves as a precursor or reagent in the synthesis of specialized organosilicon frameworks and thin-film deposition processes.

Crystal structure of H34N10S6Si2 (triclinic, P-1 (No. 2))
Ground-state structure · Materials Project
Overview

Key Properties

Cross-validated computational properties for H34N10S6Si2, aggregated across 4 databases.

Band Gap

3.34 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

4
4 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for H34N10S6Si2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P-1 (No. 2)triclinic3.340.0000-5.0581.28
P-1 (No. 2)
1.28
No. 0unknown0.65
Uses

Applications

Where H34N10S6Si2 is used.

Chemical vapor depositionMaterials science researchPrecursor for silicon-based thin films
Reference

Frequently Asked Questions

Common questions about H34N10S6Si2, answered from cross-validated data.

What is H34N10S6Si2?
This complex silicon-nitrogen-sulfur compound is a specialized chemical species typically utilized in advanced materials research. It serves as a precursor or reagent in the synthesis of specialized organosilicon frameworks and thin-film deposition processes.
What is H34N10S6Si2 used for?
H34N10S6Si2 is used in chemical vapor deposition, materials science research, and precursor for silicon-based thin films.
What is the band gap of H34N10S6Si2?
H34N10S6Si2 has a DFT-computed band gap of 3.34 eV across 4 reported structures.
Is H34N10S6Si2 a metal, semiconductor, or insulator?
With a wide band gap up to 3.34 eV it is an insulator / wide-band-gap material.
Is H34N10S6Si2 thermodynamically stable?
Yes — H34N10S6Si2 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of H34N10S6Si2?
The lowest-energy reported polymorph of H34N10S6Si2 is triclinic symmetry, space group P-1 (No. 2).
What is the density of H34N10S6Si2?
The computed density of the ground-state structure of H34N10S6Si2 is 1.28 g/cm³.
How many polymorphs of H34N10S6Si2 are known?
4 structures of H34N10S6Si2 are reported across 4 databases, spanning 2 distinct space groups.
What elements does H34N10S6Si2 contain?
H34N10S6Si2 contains H, N, S, and Si (4 elements).
Where does the data for H34N10S6Si2 come from?
H34N10S6Si2 data is cross-referenced from materials_project, aflow, omat24, cod.
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Related Compounds

Other Hydrogen Storage Hydrides in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).

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